| PART |
Description |
Maker |
| C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2 |
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 200.000A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 160 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 60 - 120 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 80 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 100 - 200 hFE.
|
Continental Device India Limited
|
| 2N6123 2N6124 |
40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE.
40.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 25 - 100 hFE.
|
Continental Device India Limited
|
| CJF15028 |
36.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 8.000A Ic, 20 hFE.
|
Continental Device India Limited
|
| CJF15031 CJF15030 |
36.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 8.000A Ic, 40 hFE.
36.000W Medium Power NPN Plastic Leaded Transistor. 150V Vceo, 8.000A Ic, 20 hFE.
|
Continental Device India Limited
|
| CDD1933 |
30.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 1000 - 10000 hFE.
|
Continental Device India Limited
|
| CJF6107 |
34.000W Medium Power PNP Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 5 hFE.
|
Continental Device India Limited
|
| CSB649AB |
20.000W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 60 - 120 hFE.
|
Continental Device India Limited
|
| 2SC3279 E000814 SC3279 2SC3269 |
Silicon NPN transistor for strobo flash applications and medium power amplifier applications
STOROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
From old datasheet system
NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
NPN EPITAXIAL TYPE (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| CSB810 |
2.000W Medium Power PNP Plastic Leaded Transistor. 110V Vceo, 8.000A Ic, 1000 - 20000 hFE.
TRANSISTOR | BJT | DARLINGTON | PNP | 110V V(BR)CEO | 8A I(C) | TO-220AB 晶体管|晶体管|达林顿|进步党| 110伏特五（巴西）总裁| 8A条一（c）| TO - 220AB现有
|
Continental Device India Limited
Won-Top Electronics Co., Ltd.
|
| FZT689 FZT689B |
SOT223 NPN SILICON PLANAR MEDIUM
NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
|
Diodes Incorporated
ZETEX[Zetex Semiconductors]
|
| 2SD1055 2SD1766 D1758 2SD1758 2SD1919 2SD1862 A580 |
Medium Power Transistor (32V, 2A)
2000 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Medium Power Transistor 32V/ 2A
Medium Power Transistor 32V, 2A
Medium Power Transistor 32V 2A
From old datasheet system
|
ROHM[Rohm]
Rohm CO.,LTD.
|
