| PART |
Description |
Maker |
| CSB1370 CSB1370F CSB1370D CSB1370E |
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE.
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE.
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE.
PNP Silicon Epitaxial Power Transistor
|
CDIL[Continental Device India Limited]
|
| CJF15033 |
50.000W Medium Power PNP Plastic Leaded Transistor. 250V Vceo, 2.000A Ic, 50 hFE.
|
Continental Device India Limited
|
| CSB1272 |
10.000W Medium Power PNP Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 1000 - 10000 hFE.
|
Continental Device India Limited
|
| CJF15031 CJF15030 |
36.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 8.000A Ic, 40 hFE.
36.000W Medium Power NPN Plastic Leaded Transistor. 150V Vceo, 8.000A Ic, 20 hFE.
|
Continental Device India Limited
|
| CTN640 CTN635 CTN636 CTN637 CTN638 CTN639 |
1.000W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 1.000A Ic, 25 - hFE
Complementary Transistors in Plastic Package for Driver Stage of Audio Amplifier
|
CDIL[Continental Device India Limited]
|
| CSB810 |
2.000W Medium Power PNP Plastic Leaded Transistor. 110V Vceo, 8.000A Ic, 1000 - 20000 hFE.
TRANSISTOR | BJT | DARLINGTON | PNP | 110V V(BR)CEO | 8A I(C) | TO-220AB 晶体管|晶体管|达林顿|进步党| 110伏特五（巴西）总裁| 8A条一（c）| TO - 220AB现有
|
Continental Device India Limited
Won-Top Electronics Co., Ltd.
|
| CSC2371N |
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.100A Ic, 40 - 80 hFE.
|
Continental Device India Limited
|
| CJF3055 |
30.000W Medium Power NPN Plastic Leaded Transistor. 90V Vceo, 10.000A Ic, 5 hFE.
|
Continental Device India Limited
|
| CSD880Y CSD880 CSD880GR CSD880O |
30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 150 - 300 hFE. Complementary CSB834GR
Audio Frequency Power Amplifier Applications
|
CDIL[Continental Device India Limited]
|
| BD535K BD536J BD534K BD538K BD538J BD534 BD537 |
50.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 8.000A Ic, 15 hFE.
50.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 8.000A Ic, 20 hFE.
; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:20mA
; Package/Case:3-TO-218X; Current, It av:25A; Gate Trigger Current Max, Igt:80mA
Triac; Triac Type:Internally Triggered; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):15A; Gate Trigger Current (QI), Igt:25uA; Package/Case:TO-220; Gate Trigger Current Max, Igt:1.5A
; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA
Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:10mA; Current, It av:6A; Gate Trigger Current Max, Igt:10mA; Holding Current:15mA RoHS Compliant: Yes
|
Continental Device India Limited
|
| CDL13007 |
80.000W Switching NPN Plastic Leaded Transistor. 400V Vceo, 6.000A Ic, 8 - 40 hFE.
|
Continental Device India Limited
|
