| PART |
Description |
Maker |
| BLM8G0710S-30PB-15 |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
| BLM7G1822S-80AB-15 |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
| BLM7G1822S-40PB-15 |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
| BLM7G1822S-20PB-15 |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
| CGY93 |
GSM 2 stage Power Amplifier MMIC
GaAs MMIC
From old datasheet system
|
INFINEON[Infineon Technologies AG]
|
| PTGA090304MD |
Wideband LDMOS Two-stage Integrated Power Amplifier 2 X 15 W, 48 V, 575 ?960 MHz
|
Cree, Inc
|
| BLF6G21-10G |
Power LDMOS transistor
10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
|
NXP Semiconductors N.V.
|
| BLF7G27LS-100 BLF7G27L-100 |
Power LDMOS transistor
100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
|
NXP Semiconductors N.V.
|
| MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| BLF3G21-30 |
30 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
UHF power LDMOS transistor BLF3G21-30<SOT467C (SOT467C)|<<http://www.nxp.com/packages/SOT467C.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLF7G27L-90P BLF7G27LS-90P |
90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| LB421-14 |
RF POWER LDMOS TRANSISTOR
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
