| PART |
Description |
Maker |
| RURP8100 MUR8100E FN2780 MURP810 |
8A/ 1000V Ultrafast Diodes
From old datasheet system
(MUR8100E / MURP8100) 8A / 1000V Ultrafast Diodes
8A, 1000V Ultrafast Diodes(8A, 1000V超快二极用于开关电 8 A, 1000 V, SILICON, RECTIFIER DIODE, TO-220AC
8A, 1000V Ultrafast Diodes 8A条，1000V共超快二极管
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| 1N829UR MLL821 1N822AUR 1N822AUR-1 1N829UR-1TR 1N8 |
From old datasheet system
6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes
6000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
3000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:1000V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
3.3 V quad buffer; 3-state - Description: 3.3V Buffer/Line Driver with Active LOW Output Enable (3-State) ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: -32/ 64 mA ; Propagation delay: 2.9@3.3V ns; Voltage: 2.7-3.6 V
Single Supply Voltage Supervisor for 5V Systems with Programmable Time Delay 8-PDIP -40 to 85
Single Supply Voltage Supervisor ror 5V Systems with Programmable Time Delay 8-SOIC 0 to 70
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Current, It av:6A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:1000V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Current, It av:6A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes 6.55 V, SILICON, VOLTAGE REFERENCE DIODE, DO-213AA
3.3 V Quad 2-input NAND gate - Description: 3.3V Quad 2-Input NAND Gate ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: -32/ 64 mA ; Propagation delay: 2.7@3.3V ns; Voltage: 2.7-3.6 V 6.2
6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-213AA
Single Supply Voltage Supervisor ror 5V Systems with Programmable Time Delay 8-SOIC -40 to 85 6.2
Single Supply Voltage Supervisor for 5V Systems with Programmable Time Delay 8-SOIC 0 to 70 6.2
SOCKET, D, PCB, STRAIGHT, 9WAY; Connector type:D Sub; Gender:Socket; Ways, No. of:9; Mating cycles, No. of:500; Termination method:Straight PCB; Material, contact:Copper alloy; Material:Steel; Contacts, No. of:9; Material, RoHS Compliant: Yes 6.2
0TC Reference Voltage Zener
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| MR2510 MR2502 MR2504 MR2500-D |
25A 1000V Silicon Rectifier
Medium-Current Silicon Rectifiers
|
ONSEMI[ON Semiconductor]
|
| BT152F-600 BT152F |
600V Vdrm 20A Sensitive Gate Silicon Controlled Rectifier, 1.7@40AV Peak On-State Voltage, 200V/μs Rise of Off-State Voltage
Silicon Controlled Rectifiers
|
SEMIWELL[SemiWell Semiconductor]
|
| 2N1909SERIES 2N1805SERIES 2N1792SERIES 2N1802 2N18 |
1000V 70A Phase Control SCR in a TO-208AD (TO-83) package
900V 70A Phase Control SCR in a TO-208AD (TO-83) package
800V 70A Phase Control SCR in a TO-208AD (TO-83) package
110 Amp RMS SCRs
|
International Rectifier
|
| MCK100-6 |
400V Vdrm 0.8A Sensitive Gate Silicon Controlled Rectifier, 1.7@1AV Peak On-State Voltage, 500V/μs Rise of Off-State Voltage
Sensitive Gate Silicon Controlled Rectifiers
|
SemiWell Semiconductor
|
| KBL08 KBL10 KBL06 KBL04 KBL01 KBL005 KBL02 |
SINGLE PHASE SILICON BRIDGE RECTIFIER VOLTAGE:50 TO 1000V CURRENT:4.0A
|
Gulf Semiconductor
http://
|
| KBPC3508 KBPC3504 KBPC3510 |
SINGLE PHASE SILICON BRIDGE RECTIFIER VOLTAGE: 50 TO 1000V CURRENT: 35.0A
|
Gulf Semiconductor
|
|
