| PART |
Description |
Maker |
| PESD1LIN PESD1LIN-115 |
LIN-bus ESD protection diode ESD protection of one automotive LIN-bus line
|
NXP Semiconductors
|
| CPDZ9V0U-HF |
Halogen Free ESD Diodes, V-C=15V, V-ESD=30kV
SMD ESD Protection Diode
|
Comchip Technology
|
| CPDF5V0C-HF |
Halogen Free ESD Diodes, V-C=15V, V-ESD=8kV
SMD ESD Protection Diode
|
Comchip Technology
|
| CPDUR9V0LP-HF |
Halogen Free ESD Diodes, V-C=16V, V-ESD=8kV
Low Capacitance ESD SMD Protection Diode
|
Comchip Technology
|
| CPDER5V0C-HF |
Halogen Free ESD Diodes, V-C=0V, V-ESD=8kV
SMD ESD Protection Diode
|
Comchip Technology
|
| CPDVR083V3U |
ESD Suppressor Array, V-C=5.5V, V-PV=15kV, V-BD=0V
SMD ESD Protection Diode
|
Comchip Technology
|
| 74F1071MSAX |
18-Bit Undershoot/Overshoot Clamp and ESD Protection Device; Package: SSOP; No of Pins: 20; Container: Tape & Reel 18-LINE DIODE BUS TERMINATION ARRAY, PDSO20
|
Fairchild Semiconductor, Corp.
|
| ESD9X3.3S ESD9X3.3ST5 ESD9X5.0ST5 |
ESD Protection Diodes(ESD淇??浜??绠?
ESD Protection Diodes(ESD保护二极 ESD保护二极管（防静电保护二极管
ESD Protection Single Diode In Ultra Small SOD-923 Package
|
ON Semiconductor
ONSEMI
|
| NNCD6.8J NNCD16J NNCD18J NNCD8.2J NNCD5.6J NNCD10J |
ESD NOISE CLIPPING DIODE 防静电噪音裁剪二极管
ESD noise clipping diode 2pin XSOF (flat type)
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| DF3A6.8FV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.21 to 19.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD）保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.21 to 19.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| DF2S6.2FS |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.10 to 11.56; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD）保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.10 to 11.56; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
