| PART |
Description |
Maker |
| MX26LV800ABXBC-55G MX26LV800ABXBC-70G MX26LV800ATX |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 16 FLASH 3V PROM, 55 ns, PDSO48
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 16 FLASH 3V PROM, 55 ns, PBGA48
|
Macronix International Co., Ltd.
http://
|
| MXB29LV800BTTC-70 MXB29LV800BTTC-90 MXB29LV800BTTC |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
MCNIX[Macronix International]
|
| MX29SL800CBTI-90 MX29SL800CTXHI-90G MX29SL800CTXBC |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY
|
Macronix International
http://
|
| MX29LV800TXBI-90 MX29LV800TXEC-90 MX29LV800TXEI-90 |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
Macronix International
|
| KM23C8100DT |
8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M(1Mx8 /512Kx16) CMOS掩膜 ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K6F8016R6B K6F8016R6B-F |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K6F8016R6D K6F8016R6D-F |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung Electronic
Samsung semiconductor
|
| HY29F800ABT-55 HY29F800ABR-90 HY29F800ABR-12 HY29F |
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO48
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO44
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory 8兆位1Mx8/512Kx16），5伏只，闪
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory 512K X 16 FLASH 5V PROM, 55 ns, PDSO48
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory 8兆位Mx8/512Kx16），5伏只，闪
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| AC23V8000 |
1MX8 BIT CMOS MASK ROM
|
Artchips
|
| KM23V8105D KM23V8105DG KM23V8105G |
8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM23C8100DET KM23C8100ET |
8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM
|
Samsung Semiconductor
|
