| PART |
Description |
Maker |
| QLF063D-P120 |
660 nm 120mW FP LASER TO-CAN
|
QD Laser
|
| QLF063D |
660 nm 100mW FP LASER TO-CAN
|
QD Laser
|
| ML9XX31 ML9SM31 ML9SM31-01-00 ML9SM31-01-01 ML9SM3 |
1536 nm, LASER DIODE
1553 nm, LASER DIODE
1558 nm, LASER DIODE
1544 nm, LASER DIODE
InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管EA调制
InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管与EA调制
1549 nm, LASER DIODE
|
Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| TSA1204IF TSA1204IFT |
DUAL CHANNEL, 12-BIT, 20MSPS, 120MW, A/D CONVERTER
|
ST Microelectronics
|
| SLD323V SLD323V-21 SLD323V-24 |
807 nm, LASER DIODE
798 nm, LASER DIODE
High Power Density 1W Laser Diode
|
SONY
|
| H12WD4850PG |
Ratings from 25A to 125A @ 48-660 V AC
|
Crydom Inc.,
|
| SFH462 |
4.19 mm, 1 ELEMENT, INFRARED LED, 660 nm
|
Infineon Technologies AG
|
| M02066-21 M02066-EVME |
Drivers, 3.3V Laser Driver IC for Applications to 3Gbps
Optical evaluation board, TO-can laser
|
Mindspeed Technologies
|
| VT5376V032 |
Ultra-low power laser motion sensor for laser mouse applications
|
STMicroelectronics
|
| LNC703PS |
Semiconductor Laser for LBPLaser Beam Printers 785 nm, LASER DIODE
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
