| PART |
Description |
Maker |
| 3SK0143 |
Silicon N-Channel 4-pin MOS FET
|
Panasonic
|
| 2SK439 2SK439E K439 |
Silicon N Channel MOS FET
Silicon N-Channel MOS FET 硅N沟道场效应晶体管
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SPAK
2SK439
|
Hitachi,Ltd.
Sanyo Semicon Device
Hitachi Semiconductor
|
| RJE0609JPD RJE0609JPD-00-J3 RJE0609JPD-15 |
Silicon P Channel MOS FET Series Power Switching
4 A, 60 V, 0.17 ohm, P-CHANNEL, Si, POWER, MOSFET SC-63, DPAK(S), 3 PIN
|
Renesas Electronics Corporation
|
| RJE0603JPE-00-J3 RJE0603JPE-15 |
50 A, 60 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET SC-83, LDPAK(S)-(1), 3 PIN
Silicon P Channel MOS FET Series Power Switching
|
Renesas Electronics Corporation
|
| RJK0222DNS-00-J5 |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
14 A, 25 V, 0.0137 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HALOGEN AND LEAD FREE, HWSON3046-8, 9 PIN
|
Renesas Electronics Corporation
|
| RJK4007DPP-M0 RJK4007DPP-M0-T2 |
Silicon N Channel MOS FET High Speed Power Switching
7.6 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220FL, 3 PIN
|
Renesas Electronics Corporation
|
| RJK6009DPP RJK6009DPP-00-T2 |
18 A, 600 V, 0.48 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220FN, 3 PIN
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6053DPP-M0 RJK6053DPP-M0-T2 |
Silicon N Channel MOS FET High Speed Power Switching
11 A, 600 V, 0.82 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220FL, 3 PIN
|
Renesas Electronics Corporation
Renesas Electronics, Corp.
|
| NP80N055PDG-E1B-AY NP80N055PDG-E2B-AY NP80N055MDG- |
MOS FIELD EFFECT TRANSISTOR
80 A, 55 V, 0.0066 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, MP-25ZP, TO-263, 3 PIN
SWITCHING N-CHANNEL POWER MOS FET
|
Renesas Electronics Corporation
|
| MP4211 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver
|
TOSHIBA
|
| RJK0206DPA RJK0206DPA-00-J53 |
70 A, 25 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET HALOGEN AND LEAD FREE, WPAK(2), 8 PIN
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
|
Renesas Electronics Corporation
|
| 3SK300 |
Silicon N Channel MOS FET
Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier
|
Hitachi Semiconductor
|
|
