| PART |
Description |
Maker |
| STP33N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| FDG312P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., Ltd
|
| AP2122AK-3.0TRG1 AP2122AK-3.3TRG1 |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
Diodes
|
| FDC6312P |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| CZT2000 |
PNP Silicon Extremely High Voltage Darlington Transistor
|
Guangdong Kexin Industrial Co.,Ltd
|
| SI2301 |
High dense cell design for extremely low RDS(ON)
|
MAKO SEMICONDUCTOR CO.,...
|
| FDG311N |
High performance trench technology for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| CES2313A |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| AP2121AK-1.5TRE1 AP2121AK-2.5TRE1 AP2121AK-2.8TRE1 |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
BCD Semiconductor Manufacturing Limited
BCDSEMI
|
| FHR2-T238 FHR2-T2381R1G FHN2-T238 FNR4-T238 FHR4-T |
High Stability Extremely Low Ohm Rating 高稳定性极低的电阻额定
|
http://
Willow Technologies Ltd
Willow Technologies Limited
Willow Technologies, Ltd.
|
| CES2308 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
