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MS20001 - STRUCTURAL EXTRUDED HINGE

MS20001_7856646.PDF Datasheet


 Full text search : STRUCTURAL EXTRUDED HINGE
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FSL214R4 FSL214 FSL214D FSL214D1 FSL214D3 FSL214R PATCH PANEL HINGE KIT 4U SCA-H
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 1.5 A, 250 V, 2.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
INTERSIL[Intersil Corporation]
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J300B TP6451 TP5952 TP5951 TP6449 TP6450 MPF108 TRANSISTOR | JFET | N-CHANNEL | 15MA I(DSS) | TO-92
; No. of Switch Positions:2; Number of Positions:2; Switch Features:Tumbler Lock With Detent
Detection Switch; Contact Current Max:300mA; Circuitry:SPDT; Actuator Style:Hinge Lever; Current Rating:0.3A; Leaded Process Compatible:Yes; Mounting
Rotary Keylock Switch; Key Removal Position:Center; Circuitry:SPST; Indexing:90 ; Contact Current Max:4A; Leaded Process Compatible:Yes
Keylock Switch; Contact Current Max:4A; No. of Poles:2; Indexing:90 ; Switch Terminals:Solder Lug; Key Removal Position:1; Leaded Process Compatible
TRANSISTOR | JFET | N-CHANNEL | 25V V(BR)DSS | 24MA I(DSS) | TO-92 晶体管|场效应| N沟道| 25V的五(巴西)直| 24mA的我(直)|92
东电?中国)投资有限公司
 
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