| PART |
Description |
Maker |
| SSTS20U60P5 |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSTS20100I |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSBD1045D |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSTS2045 |
High Junction Temperature
|
Silikron Semiconductor Co.,...
|
| SSTS20L100CTF |
High Junction Temperature
|
Silikron Semiconductor Co.,...
|
| SMA6J |
High Junction Temperature Transil
|
ST Microelectronics
|
| LSIC2SD120A15 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.
|
Littelfuse
|
| LSIC2SD120A20 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
| 2SK710 E001574 SK710 |
N CHANNEL JUNCTION TYPE (HIGH, AM HIGH, AUDIO FREQUENCY AMPLIFIER APPLICATIONS)
SILICON N CHANNEL JUNCTION TYPE
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| BCR12CM-12LB BCR12CM-12LB-A8 |
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150隆?C)
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C)
|
Renesas Electronics Corporation
|
| BCR30AM-12LB BCR30AM-12LB-A8 |
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150隆?C)
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C)
|
Renesas Electronics Corporation
|
