| PART |
Description |
Maker |
| 27C4100 27C4096 MX27C4096 MX27C4096PI-12 MX27C4096 |
(MX27C4100 / MX27C4096) 4M-BIT [512K x 8/256K x 16] CMOS EPROM
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 120 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 100 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDSO40
Single Output LDO, 50mA, Fixed(3.0V), Low Quiescent Current, Thermal Protection 5-SOT-23 256K X 16 OTPROM, 100 ns, PDIP40
|
Macronix International Co., Ltd.
|
| N08M1618L1AW N08M1618L1A N08M1618L1AB N08M1618L1AB |
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K × 16 bit
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K 】 16 bit
512K X 16 STANDARD SRAM, 150 ns, PBGA48 BGA-48
|
AMI[AMI SEMICONDUCTOR]
Unisonic Technologies Co., Ltd.
|
| AS6C8008 |
512K X 8 BIT LOW POWER 1024K X 8 BIT SUPER LOW POWER CMOS SRAM
|
List of Unclassifed Manufacturers
List of Unclassifed Manufac...
|
| BS616LV8017ECG55 BS616LV8017FIP55 BS616LV8017FIG55 |
Very Low Power CMOS SRAM 512K X 16 bit
|
Brilliance Semiconducto...
|
| LY6251316 LY6251316GL LY6251316GV LY6251316LL LY62 |
512K X 16 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| LY62L51316 LY62L51316E LY62L51316GL LY62L51316GV L |
512K X 16 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| EM610FV16CW-12LL EM610FV16CW-55LL EM610FV16CW-55S |
512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
|
| K6F8016R6B K6F8016R6B-F |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| DSK6F8016U6C |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung Electronic
Samsung semiconductor
|
| K6F8016R6BFAMILY |
512K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
