| PART |
Description |
Maker |
| 2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW.
|
USHA India LTD
|
| 2SA542 |
Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW.
|
USHA India LTD
|
| 2SC9011 |
Transistor. AM converter, AM/FM IF amplifier general purpose transistor. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic
|
USHA India LTD
|
| TIP100 TIP102 |
Monolithic Construction With Built In Base-Emitter Shunt Resistors
|
SemiHow Co.,Ltd.
|
| 2SB852 |
Darlington connection for high DC current gain. between base and emitter.
|
TY Semiconductor Co., Ltd
|
| 2SD1249 |
High collector-base voltage (Emitter open) VCBO
|
TY Semiconductor Co., Ltd
|
| TIP105 |
Monolithic Construction With Built In Base-Emitter Shunt Resistors
|
SemiHow Co.,Ltd.
|
| HI667A HI649A |
Emitter to base voltage:5V 1A PNP epitaxial planar transistor
|
Hi-Sincerity Microelectronics
|
| TIP147T TIP146T |
Monolithic Construction With Built In Base-Emitter Shunt Resistors
Monolithic Construction With Built In Base-Emitter Shunt Resistors
|
SemiHow Co.,Ltd.
TAI-SAW TECHNOLOGY CO.,...
|
| MJ10007-D |
SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode
|
ON Semiconductor
|
| MJ10023-D |
SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode
|
ON Semiconductor
|
| KGEA-BFCAM KGEA-BFCAM-B-0207-G KGEA-BFCAM-B-0207-J |
Emitter Antenna Low Profile 85x13x7mm Housing Plastic Base-Potted and Outside Connector unsealed&sealed
Emitter Antenna Low Profile 85x13x7mm Housing plastic base-potted and outside connector unsealed & sealed
|
PREMO CORPORATION S.L
|
