| PART |
Description |
Maker |
| H12056-15 |
Metal Package PMT with Gate Function
|
Hamamatsu Corporation
|
| H7422-15 |
Metal Package PMT with Cooler
|
Hamamatsu Corporation
|
| H7468 H7468-01 H7468-03 H7468-20 |
Metal Packege PMT with Internal Charge Amp ADC Type
|
Hamamatsu Photonics HAMAMATSU[Hamamatsu Corporation]
|
| IRGS14C40L IRGB14C40L IRGSL14C40L |
430V Low-Vceon Discrete IGBT in a TO-262 package 430V Low-Vceon Discrete IGBT in a D2-Pak package 430V Low-Vceon Discrete IGBT in a TO-220AB package IGBT with on-chip Gate-Emitter and Gate-Collector clamps INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| H9319-15 |
Head-on PMT
|
Hamamatsu Corporation
|
| SFBUV10N SF_BUV10N BUV10N |
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package From old datasheet system Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
|
Seme LAB TT electronics Semelab Limited
|
| 74HC08 74HC08DR2G 74HC08DTR2G 74HC08.REV1 |
74HC08 Data Sheet Quad 2-Input AND Gate; Package: TSSOP-14; No of Pins: 14; Container: Tape and Reel; Qty per Container: 2500 HC/UH SERIES, QUAD 2-INPUT AND GATE, PDSO14 Quad 2-Input AND Gate; Package: SOIC 14 LEAD; No of Pins: 14; Container: Tape and Reel; Qty per Container: 2500 HC/UH SERIES, QUAD 2-INPUT AND GATE, PDSO14 Quad 2−Input AND Gate High−Performance Silicon−Gate CMOS
|
ON Semiconductor
|
| C7169 |
Power Supply for PMT Modules
|
HAMAMATSU[Hamamatsu Corporation]
|
| D5011UK |
METAL GATE RF SILICON FET
|
Seme LAB
|
| D2003 D2003UK |
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| DMD1029-A |
METAL GATE RF SILICON FET
|
Seme LAB
|