| PART |
Description |
Maker |
| 444CNQ040 |
SCHOTTKY RECTIFIER Guard ring for enhanced ruggedness and long term reliability
|
Sangdest Microelectroni...
|
| BAT64 BAT64-04 BAT64-05 BAT64-06 Q62702-A961 Q6270 |
Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring) Recognised Certification- 5W DIP Package- 4kVDC & 6kVDC Isolation- Regulated Output- Continuous Short Circiut Protection Auto-Restarting Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) Silicon Schottky Diodes (For low-loss fast-recovery meter protection bias isolation and clamping applications Integrated diffused guard ring) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
| 6A05 6A1 6A2 6A4 6A6 6A8 6A10 |
AXIAL SILASTIC GUARD JUNCTION STANDARD RECTIFIER
|
PFS & MIC
|
| 6A6 6A10 |
AXIAL SILASTIC GUARD JUNCTION STANDARD RECTIFIER
|
MIC GROUP RECTIFIERS
|
| 1N5394 1N5396 |
AXIAL SILASTIC GUARD JUNCTION STANDARD RECTIFIER
|
MIC GROUP RECTIFIERS
|
| P600A P600J P600G |
AXIAL SILASTIC GUARD JUNCTION STANDARD RECTIFIER
|
MIC GROUP RECTIFIERS
|
| RL251 RL252 RL253 RL254 RL255 RL256 RL257 |
AXIAL SILASTIC GUARD JUNCTION STANDARD RECTIFIER
|
PFS & MIC
|
| RL151 RL152 RL153 RL154 RL155 RL156 RL157 |
AXIAL SILASTIC GUARD JUNCTION STANDARD RECTIFIER
|
PFS & MIC
|
| MBR20H100CT MBR20H200CT |
20.0AMPS. Schottky Barrier Rectifiers Guard-ring for overvoltage protection
|
Taiwan Semiconductor Co...
|
| 1N5819-T 1N5817-B 1N5817-T 1N5818-B 1N5819-B 1N581 |
Through-Hole Schottky Rectifiers Guard Ring Die Construction for Transient Protection
|
Diodes Incorporated
|
| BAT64-07W BAT6407W Q62702-A3470 BAT6407WQ62702A347 |
Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring) Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) 0.12 A, 2 ELEMENT, SILICON, SIGNAL DIODE Ten Output Zero Delay Buffer INVERTER 5V-INPUT 900V-OUTPUT From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|