| PART |
Description |
Maker |
| AP01L60AT10 |
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness effectiveness
|
Advanced Power Electronics Corp.
|
| AP2324GN-HF |
Advanced Power MOSFETs
|
TY Semiconductor Co., Ltd
|
| AP2320GN-HF |
Advanced Power MOSFETs
|
TY Semiconductor Co., Ltd
|
| AP2306AGEN-HF |
Advanced Power MOSFETs
|
TY Semiconductor Co., Ltd
|
| KI4923DY |
TrenchFET Power MOSFETS Advanced High Cell Density Process
|
TY Semiconductor Co., Ltd
|
| IXFR26N60Q |
Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFETTM Power MOSFETs ISOPLUS247 Q-CLASS
|
IXYS Corporation
|
| IXFH26N60Q IXFT26N60Q |
Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFETTM Power MOSFETs Q-Class
|
IXYS[IXYS Corporation]
|
| IXFR4N100Q |
Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFET Power MOSFETs ISOPLUS247 (Electrically Isolated Backside)
|
IXYS
|
| IXFH80N10Q IXFT80N10Q |
N-Channel Enhancement Mode HiPerFET Power MOSFET(??ぇ婕???荤┛?靛?00V,瀵奸??甸?5m惟??娌??澧?己??iPerFET???MOSFET) Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFET Power MOSFETs Q-Class
|
IXYS Corporation
|
| UB3010 |
N-Ch 30V Fast Switching MOSFETs N-Ch 30V Fast Switching MOSFETs Advanced high cell density Trench technology
|
Unitpower Technology Limited Unitpower Technology Li...
|
| IXFE44N60 |
Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|