| PART |
Description |
Maker |
| AKD4641EN-A |
16bit stereo CODEC with built-in Microphone-amplifier and 16bit Mono CODEC for Bluetooth Interface.
|
Asahi Kasei Microsystems
|
| AK4641EN |
16bit stereo CODEC with built-in Microphone-amplifier and 16bit Mono CODEC for Bluetooth Interface.
|
Asahi Kasei Microsystems
|
| HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V1 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power
1M x 16Bit EDO DRAM 100万16 EDO公司的DRAM
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 60 ns, PDSO44
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor, Inc.
|
| A42L0616S-45L A42L0616S-50L A42L0616S-60 A42L0616S |
45ns 1M x 16bit CMOS dynamic ram with EDO page mode
50ns 1M x 16bit CMOS dynamic ram with EDO page mode
60ns 1M x 16bit CMOS dynamic ram with EDO page mode
|
AMIC Technology
|
| UN8231A UN8231 UNR8231A UNR8231 0706 UNR8231/UNR82 |
UNR8231/UNR8231A (UN8231/UN8231A) - NPN Transistor with built-in Resistor
From old datasheet system
Transistors with built-in Resistor
|
Matsshita / Panasonic
|
| EMA2 |
PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
Built-In Biasing Resistors, R1 = R2 = 47kW.
|
Rohm
|
| TB62706 TB62706BF TB62706BN TB6206BN EE08018 |
16BIT SHIFT REGISTER / LATCHES & CONSTANT CURRENT DRIVERS
16BIT SHIFT REGISTER, LATCHES & CONSTANT CURRENT DRIVERS
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| AK4563A AK4563AVF |
Low Power 16bit 4ch ADC & 2ch DAC with ALC
Low Power 16bit 4ch ADC & 2ch DAC with ALC 低功6通道ADC
|
Asahi Kasei Microsystems Co.,Ltd
Asahi Kasei Microsystems Co., Ltd.
|
| K4F641612B K4F641612B-L K4F641612B-TC K4F641612B-T |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM416C256DLJ-7 KM416V256DLJ-5 KM416C256DLJ-5 KM416 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V, self-refresh capability
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 3.3V, self-refresh capability
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 5V, self-refresh capability
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 5V, self-refresh capability
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 3.3V, self-refresh capability
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V, self-refresh capability
|
Samsung Electronic
|
| M12L32162A-5.5BG M12L32162A09 M12L32162A-5.5TG M12 |
1M x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| K4M28163PH |
2M x 16Bit x 4 Banks Mobile SDRAM
|
Samsung semiconductor
|
|
