| PART |
Description |
Maker |
| ADG1611 ADG1611BCPZ-REEL ADG1611BCPZ-REEL7 ADG1611 |
1 Ω Typical On Resistance, ±5 V, 12 V, 5 V, and 3.3 V Quad SPST Switches
1 Ω Typical On Resistance, ±5 V, 12 V, 5 V, and 3.3 V Quad SPST Switches
|
Analog Devices
|
| WS57C49C WS57C49C-25D WS57C49C-25J WS57C49C-25S WS |
THERMISTOR, NTC; Series:B572; Thermistor type:NTC; Resistance:5R; Tolerance, resistance:20%; Beta value:2900; Temperature, lower limit, beta value:25(degree C); Temperature, upper limit, beta value:100(degree C); Case RoHS Compliant: Yes
CURRENT LIMITER INRSH 33 OHM 20%
THERMISTOR, NTC; Series:B572; Thermistor type:NTC; Resistance:2.5R; Tolerance, resistance: /-20%; Beta value:2800; Temperature, lower limit, beta value:25(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes
CURRENT LIMITR INRSH 4.7 OHM 20%
CURRENT LIMITR INRSH 2.5 OHM 20% 高K的8的CMOS胎膜早破/ RPROM
HIGH SPEED 8K x 8 CMOS PROM/RPROM 高K的8的CMOS胎膜早破/ RPROM
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| BGA318 Q62702-G0043 |
From old datasheet system
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 硅双极单片放大器（级0瓦，增益模块十六分贝典型增益.0 GHz2 dBm典型的P - 1dB的在1.0千兆赫）
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 0 MHz - 1200 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BGA318 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz)
|
Siemens Semiconductor Group
|
| PS710AL-1A-E4 PS710A-1A PS710AL-1A PS710AL-1A-E3 |
6-PIN DIP / 0.1 ohm LOW ON-STATE RESISTANCE 1.8 A CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET
6-PIN DIP, 0.1 ohm LOW ON-STATE RESISTANCE 1.8 A CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET 6引脚DIP.1欧姆的低导通状态电.8连续负载电流1通道光学耦合场效应晶体管
6-PIN DIP, 0.1 ohm LOW ON-STATE RESISTANCE 1.8 A CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET
|
NEC[NEC]
NEC Corp.
NEC, Corp.
|
| AP0903GM-HF AP0903GM-HF14 AP0903GM-HF-14 |
Low On-resistance, Fast Switching Characteristic
30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Advanced Power Electronics Corp.
Advanced Power Electronics ...
|
| AP4407GS AP4407GP |
50 A, 30 V, 0.014 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
Lower On-resistance, Simple Drive Requirement
|
Advanced Power Electronics Corp.
|
| CD2520FC CD2520WBA-0.101 CD2520WBA CD2015FC CD2015 |
Low Resistance Chip down to 0.010 OHM at - with unique Pedestal Terminal Designl for Current Sense in Hybrid and SMT Applications
|
RHOPOINT[RHOPOINT COMPONENTS]
|
| PS7200K-1A PS7200K-1A-F4-A PS7200K-1A-A PS7200K-1A |
4-PIN SOP, 1.1 Ohm LOW ON-STATE RESISTANCE 1-ch Optical Coupled MOS FET 4引脚SOP.1欧姆的低导通状态电通道光学耦合场效应晶体管
From old datasheet system
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
|
| M37560M2-XXXGP M37560M2-XXXFP M37560M5-XXXGP M3756 |
RES-ARRAY 39-OHM 4-ELEMENT 5% 0.063W CONVEX THK-FILM SMD-1206 TR-7-PA
Thick Film Resistor Array; Series:CRB; Resistance:56kohm; Resistance Tolerance: /- 5%; Power Rating:0.063W; Operating Temperature Range:-55 C to 125 C; Resistor Element Material:Thick Film; Voltage Rating:50VDC RoHS Compliant: Yes
1.0 UF 10% 35 VDCW
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| MPX10GP MPX10GVP MPX10 MPX10D MPX10DP MPX10GS MPX1 |
0 to 10 kPa (0-1.45 psi) 35 mV FULL SCALE SPAN (TYPICAL) 00千帕-1.45 PSI）的35压全尺寸跨度（典型）
0 to 10 kPa (0-1.45 psi) 35 mV FULL SCALE SPAN (TYPICAL) GAGE, PEIZORESISTIVE PRESSURE SENSOR, 0-1.45Psi, 1%, 20-80mV, THROUGH HOLE MOUNT
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
