| PART |
Description |
Maker |
| 2SA1201 |
High Voltage : VCEO = -120V High Transition Frequency : fT = 120MHz(typ.)
|
TY Semiconductor Co., Ltd
|
| 2SC5477 |
150mW SMD NPN transistor, maximum rating: 20V Vceo, 50mA Ic, 50 to (typ)148 hFE. High Frequency Amplification
|
Isahaya Electronics Corporation
|
| SPW |
Special Purpose, High Frequency Load (Tubes), High Stability and Excellent High Frequency Characteristics, Particularly Suited for High Frequency Applications
|
Vishay
|
| S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
| GSCX-26-16 |
SM Low Frequency Cylindrical Crystal
|
Golledge Electronics Lt...
|
| GSCX26B7B750 GSCX267750 GSCX2615360 GSCX26 GSCX-26 |
SM Low Frequency Cylindrical Crystal
|
STMicroelectronics
GOLLEDGE[Golledge Electronics Ltd]
|
| GSCX-26 |
SM Low Frequency Formed Lead Cylindrical Crystal
|
Golledge Electronics Lt...
|
| FD1000FV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| FD1000FH-56 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
|
