| PART |
Description |
Maker |
| RJK0853DPB13 RJK0853DPB-00-J5 RJK0853DPB-15 |
80V, 40A, 8.0m max. Silicon N Channel Power MOS FET Power Switching
80V, 40A, 8.0m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| STD40NF06 STD40NF06T4 |
N-CHANNEL 60V - 0.024 OHM - 40A DPAK STRIPFET II POWER MOSFET
N-CHANNEL 60V - 0.024 ohm - 40A DPAK STripFET II POWER MOSFET
N-CHANNEL 60V - 0.024 ohm - 40A DPAK STripFET⑩ II POWER MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| RJK0653DPB RJK0653DPB-00-J5 RJK0653DPB-13 |
60V, 45A, 4.8m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| HD10 HD01 HD02 HD08 HD04 HD06 |
TRIAC-400V 25 AMP
TRIAC,800V V(DRM),25A I(T)RMS,TO-220 RoHS Compliant: Yes
Bridge Rectifier; Repetitive Reverse Voltage Max, Vrrm:200V; Package/Case:TO-126; Current Rating:4A; Mounting Type:Through Hole
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):40A; Gate Trigger Current (QI), Igt:25mA; Package/Case:TO-220AB RoHS Compliant: Yes
Triac; Package/Case:TO-48; Current, It av:40A; Mounting Type:Through Hole; Repetitive Reverse Voltage Max, Vrrm:400V; Current Rating:40A; Voltage
0.8 Amp Single Phase Glass Passivated Bridge Rectifier 100 to 1000 Volts
|
Micro Commercial Components Corp.
MCC[Micro Commercial Components]
Micro Commercial Compon...
|
| RJK03N6DPA |
30V, 40A, 3.8m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N2DPA |
30V, 40A, 4.0m max Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| PA52 |
Amplifiers - Apex Linear Op-Amp, 200V, 40A OP-AMP, 10000 uV OFFSET-MAX, 3 MHz BAND WIDTH, MDFM12
|
Cirrus Logic, Inc.
|
| LY3 LY4N LY1 LY2 LY4S LY1-0 LY1-CR LY1-D LY1F LY1L |
General Purpose Relay
Metal Oxide Resistor; Series:MP800; Resistance:0.020ohm; Resistance Tolerance: /- 5 %; Power Rating:20W; Temperature Coefficient:0 to 300 ppm/ C; Terminal Type:Radial Leaded; Package/Case:2-TO-220; Voltage Rating:300V 通用继电
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current, IT(rms):40A; Gate Trigger Current (QI), Igt:50mA; Current, It av:40A; Forward Current:40A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes 通用继电
Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVS06; Number of Contacts:10; Connector Shell Size:13; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight 通用继电
General Purpose Relay 通用继电
RES 1206 475R 0.125W 1% 200V 100PPM/C
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):40A; Gate Trigger Current (QI), Igt:50mA; Current, It av:40A; Forward Current:40A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Current, It av:6A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
Power Thick Film Resistor; Series:MK; Resistance:2Mohm; Resistance Tolerance: 1%; Power Rating:0.75W; Operating Temperature Range:-55 C to C
|
International Rectifier, Corp.
Omron Electronics, LLC
OMRON[Omron Electronics LLC]
http://
|
| BD16922EFV-M |
Automotive 2ch 60V Max, H-bridge Drivers
|
ROHM
|
| PU4120 PU4120P PU4120Q |
V(cbp): 60V; V(ceo): 60V; V(ebo): 5V; 15W; silicon NPN triple-diffused planar darlington transistor array
(PU4120 / PU4420) SILICON NPN TRIPLE-DIFFUSED PLANAR DARLINGTON TYPE
|
Panasonic Semiconductor
|
| HT1000/08OJ6 |
800V V[drm] Max., 980A I[T] Max. Silicon Controlled Rectifier
|
Herrmann
|
| Z88C00-20VSC Z88C00-25VEC Z88C00-20VEC Z88C01-25VE |
Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA; Holding Current:35mA RoHS Compliant: Yes
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):40A; Gate Trigger Current (QI), Igt:100mA; Package/Case:3-TO-218X; Current, It av:40A; Gate Trigger Current Max, Igt:100mA
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Package/Case:V-PAK; Current, It av:6A; Gate Trigger Current Max, Igt:35mA
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:50mA; Current, It av:8A; Holding Current:50mA; Leaded Process Compatible:Yes RoHS Compliant: Yes
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-220; Current, It av:4A; Holding Current:30mA
Microcontroller 微控制器
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):40A; Gate Trigger Current (QI), Igt:100mA; Package/Case:3-TO-218; Current, It av:40A; Gate Trigger Current Max, Igt:100mA 8位微控制
|
Maxim Integrated Products, Inc.
|
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