| PART |
Description |
Maker |
| RJK0655DPB RJK0655DPB-00-J5 RJK0655DPB-15 |
60V, 35A, 6.7m max. Silicon N Channel Power MOS FET Power Switching
60V, 35A, 6.7m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| STD35NF06T4 STD35NF06 |
N-channel 60V - 0.018Ω - 35A - DPAK STripFET II Power MOSFET
N-channel 60V - 0.018ヘ - 35A - DPAK STripFET⑩ II Power MOSFET
|
STMicroelectronics
|
| STD30NF06L STD30NF06L-1 STD30NF06LT4 |
N-CHANNEL 60V 0.022 OHM 35A DPAK / IPAK STRIPFET II POWER MOSFET
N-CHANNEL 60V 0.022 OHM 35A DPAK / IPAK STRIPFET II POWER MOSFET
N-CHANNEL 60V - 0.022ohm - 35A DPAK/IPAK STripFET POWER MOSFET
N-CHANNEL 60V - 0.022ohm - 35A DPAK/IPAK STripFET⑩ POWER MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| 2N3651 2N3652 2N3650 2N3653 |
35A silicon controlled rectifier. Vrsom 300V.
35A silicon controlled rectifier. Vrsom 400V.
35A silicon controlled rectifier. Vrsom 150V.
35A silicon controlled rectifier. Vrsom 500V.
|
General Electric Solid State
|
| 2N7000 2N7002 2N7000G |
N-channel 60V - 1.8ohm - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| SBT350-06L |
Schottky Barrier Diode (Twin Type 隆陇 Cathode Common) 60V, 35A Rectifier
Schottky Barrier Diode (Twin Type ・ Cathode Common) 60V, 35A Rectifier
|
Sanyo Semicon Device
|
| SBT350-06J |
Schottky Barrier Diode (Twin Type 隆陇 Cathode Common) 60V, 35A Rectifier
Schottky Barrier Diode (Twin Type ・ Cathode Common) 60V, 35A Rectifier
|
Sanyo Semicon Device
|
| BC445 BC445A |
V(ceo): 60V; V(cbo): 60V; V(ebo): 5V; voltage NPN silicon transistor
|
Motorola
|
| GBPC3501W GBPC3510W GBPC35005 GBPC35005W GBPC3501 |
600V; 35A glass passivated bridge rectifier
HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 35 Amperes)
Dual Audio Operational Amplifier 8-TSSOP -40 to 85 35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
35A GLASS PASSIVATED BRIDGE RECTIFIER 35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
|
Pan Jit International Inc.
DIODES[Diodes Incorporated]
Diodes, Inc.
|
| RJK03N3DPA |
30V, 35A, 4.7m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2N3804 2N4985 2N1650 2N2632 |
SILICON UNIDIRECTIONAL SWITCH|8.2V V(BO) MAX|300UA I(S)|TO-18
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 3A I(C) | STR-10
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | STR-10 晶体管|晶体管|叩| 60V的五（巴西）总裁| 5A条一（c）|个STR - 10
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 50MA I(C) | TO-71 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 50mA的一（c）|1
|
Mitsubishi Electric, Corp.
Powerex, Inc.
|
| 2SJ600 2SJ600-Z |
Pch power MOSFET 60V RDS(on)1=50m ohm MAX. MP-3
|
NEC
|
