| PART |
Description |
Maker |
| FDMS2504SDC |
N-Channel Dual Cool-TM Power Trench SyncFet-TM 25V, 49A, 1.2mOhms
|
Fairchild Semiconductor
|
| FDMS2506SDC |
N-Channel Dual Cool-TM Power Trench SyncFet-TM 25V, 49A, 1.45mOhms
|
Fairchild Semiconductor
|
| FDD5353 |
60V N-Channel Power Trench MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 11.5 A, 60 V, 0.0123 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
N-Channel Power Trench㈢ MOSFET 60V, 50A, 12.3mヘ
N-Channel Power Trench? MOSFET 60V, 50A, 12.3mΩ
|
Fairchild Semiconductor, Corp.
|
| FDD6632_04 FDD6632 FDD663204 FDD6632NL |
30V N-Channel Logic Level UltraFET Trench Power MOSFET 4 A, 30 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
N-Channel Logic Level UltraFET? Trench Power MOSFET 30V, 9A, 70m?/a>
N-Channel Logic Level UltraFET㈢ Trench Power MOSFET 30V, 9A, 70mз
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| STN4822 |
STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.
|
Stanson Technology
|
| CM75DU-24F |
Trench Gate Design Dual IGBTMOD?/a> 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| FDT86244 |
150V N-Channel Power TrenchMOSFET
N-Channel Power Trench MOSFET
N-Channel Power Trench MOSFET
|
Fairchild Semiconductor
|
| PMDXB950UPE |
20 V, dual P-channel Trench MOSFET
|
NXP Semiconductors
|
| PMDPB30XN |
20 V, dual N-channel Trench MOSFET
|
NXP Semiconductors
|
| SUF2001 |
Dual N and P-channel Trench MOSFET
|
AUK corp
|
| FDC86244 |
N-Channel Power Trench? MOSFET 150 V, 2.3 A, 144 mΩ
150V N-Channel Power TrenchMOSFET
|
Fairchild Semiconductor
|
|
