| PART |
Description |
Maker |
| K7K1618U2C K7K1636U2C |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| K7I323682M K7I321882M K7M161825A-QCI65 |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
512Kx36 & 1Mx18 Pipelined NtRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IS61DDP2B42M36A/A1/A2 IS61DDP2B44M18A IS61DDP2B44M |
4Mx18, 2Mx36 72Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| IS61DDP2B41M18A IS61DDP2B451236A/A1/A2 IS61DDP2B41 |
1Mx18, 512Kx36 18Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| K7D801871B K7D801871B-HC37 K7D801871B-HC35 K7D8018 |
256Kx36 & 512Kx18 SRAM
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MC14536BDWR2G MC14536BFELG |
Programmable Timer 1 TIMER(S), PROGRAMMABLE TIMER, PDSO16
Programmable Timer 4000/14000/40000 SERIES, SYN POSITIVE EDGE TRIGGERED 4-BIT UP BINARY COUNTER, PDSO16
|
Rectron Semiconductor
|
| ICM7240IPE |
8-Bit Binary, Programmable, RC Timer Counter PULSE; RECTANGULAR, TIMER, PDIP16
|
Maxim Integrated Products, Inc.
|
| MN101C487 MN101C485 |
From old datasheet system
Timer counter 2 : 8-bit X 1 (square-wave/8-bit PWM output, event count, synchronous output event)
(MN101C485 / MN101C487) Timer counter 2 : 8-bit X 1
|
http://
Panasonic Semiconductor
|
| M51849 M51849FP M51849L M51849E |
RECTANGULAR, TIMER, PDSO10
CAP 22UF 25V ELECT KMG RAD
COUNTER TIMER
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CY7C1550KV18-450BZC CY7C1550KV18-400BZC CY7C1548KV |
Sync SRAM; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 DDR SRAM, 0.45 ns, PBGA165
72-Mbit DDR II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress Semiconductor, Corp.
|
