| PART |
Description |
Maker |
| STEVAL-TDR009V1 |
RF power amplifier demonstration board using: 2 x SD2932 N-channel enhancement-mode lateral MOSFETs
|
STMicroelectronics
|
| APT30M40B2VR APT30M40LVR APT30M40LVRG |
Power MOSFET; Package: TO-264 [L]; ID (A): 76; RDS(on) (Ohms): 0.04; BVDSS (V): 300; 76 A, 300 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
POWER MOS V 300V 76A 0.040 Ohm
|
Microsemi, Corp.
Advanced Power Technology
|
| ARF466FL ARF466FL10 |
RF MOSFET for 100-300 Volt Operation; P(out) (W): 300; fO (MHz): 45; VDD (V): 200; BVDSS (V): 1000; RqJC (ºC/Watt): 0.27; Case Style: T2; COO: A-E VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
|
Microsemi, Corp.
Microsemi Corporation
|
| MMBF2202PT1 MMBF2202P |
Power MOSFET 300 mAmps, 20 Volts P-Channel SC-70/SOT-323
Power MOSFET 300 mAmps / 20 Volts P−Channel SC/SOT�
|
ON Semiconductor
|
| RJU003N03T106 |
2.5V Drive Nch MOSFET
300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Rohm
|
| R6200230 R6202250 R6201050 R6201850 R6201040 R6200 |
500 A, 400 V, SILICON, RECTIFIER DIODE
General Purpose Rectifier (300-500 Amperes Average 2400 Volts) 通用整流器（300-500安培平均2400伏特
300 A, 2200 V, SILICON, RECTIFIER DIODE HERMETIC SEALED PACKAGE-2
300 A, 1200 V, SILICON, RECTIFIER DIODE
300 A, 200 V, SILICON, RECTIFIER DIODE
|
Powerex Power Semicondu...
POWEREX INC
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Powerex Power Semiconductor...
|
| 2N7002-215 |
60 V, 300 mA N-channel Trench MOSFET
|
NXP Semiconductors
|
| FDPF14N30T |
N-Channel UniFET MOSFET 300 V, 14 A, 290 m
|
Fairchild Semiconductor
|
| FQPF14N30 |
300V N-Channel MOSFET 8.5 A, 300 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRF737LC-005PBF IRF737LC-004 IRF737LC-003 IRF737LC |
6.1 A, 300 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
VISHAY INTERTECHNOLOGY INC
|
| UZVN4424Z |
300 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
DIODES INC
ZETEX PLC
|
|
