| PART |
Description |
Maker |
| FXT3866SM FXT449SM FXT549SM FXT749SM FXT649SM FXT6 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SOT-89
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | SOT-89
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 2A I(C) | SO
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | SO
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 500MA I(C) | SO
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管| npn型| 150伏五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | SO 晶体管|晶体管|进步党| 100V的五（巴西）总裁|甲一（c）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | SOT-89 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 1A条一（c）|采用SOT - 89
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管|叩| 45V的五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 400MA I(C) | SO 晶体管|晶体管|叩| 30V的五（巴西）总裁| 400mA的一（c）|
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | SOT-89
|
Zetex Semiconductor PLC
Fujitsu, Ltd.
Bourns, Inc.
Amphenol, Corp.
|
| 2SA1326 2SC3341 |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 500MA I(C) | SOT-23
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 500MA I(C) | SOT-23 晶体管|晶体管|叩| 30V的五（巴西）总裁| 500mA的一（c）| SOT - 23封装
|
Samsung Semiconductor Co., Ltd.
|
| BU705F 2SC3280F 2SC3281F |
TRANSISTOR | BJT | NPN | 700V V(BR)CEO | 2.5A I(C) | SOT-199
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 12A I(C) | SOT-186VAR
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 15A I(C) | SOT-186VAR 晶体管|晶体管| npn型| 200伏五（巴西）总裁|5A一c）|的SOT - 186VAR
|
Ecliptek, Corp.
|
| GF2304 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 2.5A I(D) | SOT-23 晶体管| MOSFET的| N沟道| 30V的五（巴西）直| 2.5AI（四）| SOT - 23封装
|
Vishay Intertechnology, Inc.
|
| BSR13T/R BSR14T/R |
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | SOT-23
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | SOT-23 晶体管|晶体管|叩| 40V的五（巴西）总裁| 800mA的一（c）| SOT - 23封装
|
Advanced Semiconductor, Inc.
|
| CSA1162Y-3E CSA1162 CSA1162GR_G-3F CSA1162GRG-3F C |
0.150W Low Frequency PNP SMD Transistor. 50V Vceo, 0.150A Ic, 200 - 400 hFE. Complementary CSC2712
LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | SOT-23
晶体管|晶体管|进步党| 50V五（巴西）总裁| 150毫安一c）| SOT - 23封装
|
CDIL[Continental Device India Limited]
|
| CMBT200 CMBT200A |
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 500MA I(C) | SOT-23 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 500mA的一c）| SOT - 23封装
|
Sumida, Corp.
|
| BCX71H/E9 |
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 200MA I(C) | SOT-23 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 200mA的一（c）| SOT - 23封装
|
Fujitsu, Ltd.
|
| 2SC4863 2SC4863-5 2SC4863-3 |
TRANSISTOR | BJT | NPN | 8V V(BR)CEO | 70MA I(C) | SOT-323 晶体管|晶体管|叩| 8V的五（巴西）总裁|提供70mA一（c）|SOT - 323
VHF to UHF Wide-Band Low-Noise Amp Applications
|
Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| PDTC144ET PDTC144ET/T1 |
TRANSISTOR DIGITAL SOT-233
NPN resistor-equipped transistor
|
PHILIPS[Philips Semiconductors]
|
| GN1A4Z GN1A4Z-T2 GN1A4Z-T1 GN1A4ZM67 |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-323 晶体管| 50V五（巴西）总裁| 100mA的一（c）|的SOT - 323
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR
Hybrid transistor
|
NEC, Corp.
|
