| PART |
Description |
Maker |
| 2SA1417 2SC3647 2SC3647T 2SA1417S |
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | SOT-89
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 100V的五（巴西）总裁|甲一（c）|采用SOT - 89
High-Voltage Switching Applications
|
Unisonic Technologies Co., Ltd.
SANYO[Sanyo Semicon Device]
|
| 2SA1416R 2SC3646T 2SC3646R 2SC3646S 2SA1416 |
PNP Epitaxial Planar Silicon Transistors High-Voltage Switching Applications
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 100V的五（巴西）总裁| 1A条一（c）|采用SOT - 89
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | SOT-89 晶体管|晶体管|叩| 100V的五（巴西）总裁| 1A条一（c）|采用SOT - 89
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 1A I(C) | SOT-89
|
SANYO
NEC, Corp.
|
| SR280 SR230 |
VOLTAGE 20V ~ 100V 2.0 AMP Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| SCD3100 SCD3100-15 |
VOLTAGE 100V 3.0 AMP Surface Mount Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnol...
SeCoS Halbleitertechnologie GmbH
|
| SCD1100 |
VOLTAGE 100V 1.0 AMP Surface Mount Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| SBL10U100F |
Voltage 100V 10.0 Amp Low VF Trench MOS Barrier Schottky Rectifer
|
SeCoS Halbleitertechnol...
|
| HIP2100EIB HIP2100EIBZ HIP2100IBZ HIP2100IR HIP210 |
100V/2A Peak High-Frequency Half Bridge Driver with CMOS Logic Inputs; Temperature Range: -40°C to 85°C; Package: 12-DFN T&R 2 A HALF BRDG BASED MOSFET DRIVER, DSO12
100V/2A Peak, Low Cost, High Frequency Half Bridge Driver
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| ICL7663 ICL7663ACPA ICL7663ACSA ICL7663AIJA ICL766 |
High-Performance Impact<TM> PAL<R> Circuits 28-PLCC 0 to 75
Programmable Positive Voltage Regulator
"Low-Power, Adjustable- Output, Positive-Voltage Linear Regulator"
5.0 AMP POSITIVE VOLTAGE REGULATOR
|
MAXIM INTEGRATED PRODUCTS INC
MAXIM - Dallas Semiconductor
Maixm
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| NTE5869 NTE5850 NTE5866 NTE5861 NTE5863 NTE5862 NT |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon Power Rectifier Diode 6 Amp
Silicon Power Rectifier Diode, 6 Amp
Silicon Power Rectifier Diode / 6 Amp
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
|
NTE[NTE Electronics]
|
| LT1804CDD LT1803CS5TRMPBF LT1804IDD LT1805 LT1805C |
Single/Dual/Quad 100V/µs, 85MHz, Rail-to-Rail Input and Output Op Amps
Single/Dual/Quad 100V/s, 85MHz, Rail-to-Rail Input and Output Op Amps
Single/Dual/Quad 100V/µs, 85MHz, Rail-to-Rail Input and Output Op Amps; Package: DFN; No of Pins: 8; Temperature Range: 0°C to 70°C 2 CHANNEL, VIDEO AMPLIFIER, PDSO8
Single/Dual/Quad 100V/µs, 85MHz, Rail-to-Rail Input and Output Op Amps; Package: SO; No of Pins: 14; Temperature Range: 0°C to 70°C 4 CHANNEL, VIDEO AMPLIFIER, PDSO14
Single/Dual/Quad 100V/µs, 85MHz, Rail-to-Rail Input and Output Op Amps; Package: SOT; No of Pins: 5; Temperature Range: 0°C to 70°C 1 CHANNEL, VIDEO AMPLIFIER, PDSO5
Single/Dual/Quad 100V/ms, 85MHz, Rail-to-Rail Input and Output Op Amps
|
Linear Technology, Corp.
|
| OM6059SB OM6056 OM6061SB OM6056SB OM6057SB OM6058S |
High Current, High Voltage 500V , 58 Amp N-Channel, MOSFET(大电流，高电压，500V , 58A，N沟道，MOS场效应管)
POWER MOSFETS IN A HERMETIC ISOLATED POWER BLOCK PACKAGE
100V Single N-Channel Hi-Rel MOSFET in a PB-3A package
500V Single N-Channel Hi-Rel MOSFET in a PB-3A package
600V Single N-Channel Hi-Rel MOSFET in a PB-3A package
200V Single N-Channel Hi-Rel MOSFET in a PB-3A package
|
List of Unclassifed Manufacturers
International Rectifier
ETC[ETC]
|
