| PART |
Description |
Maker |
| FM22LD16-13 |
4Mbit F-RAM Memory
|
Cypress Semiconductor
|
| LH28F400SUHT LH28F400SUHT-NC80 |
4Mbit(512Kbit x 8/256 Kbit x 16) 5V Single Voltage Flash Memory
4Mbit(512Kbit x 8,256 Kbit x 16) 5V Single Voltage Flash Memory
|
SHARP[Sharp Electrionic Components]
|
| ES29BDS160DT-90RTGI ES29BDS160ET-90RTGI ES29BDS320 |
4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
|
优先(苏州)半导体有限公
|
| ES29LV800DB-70TGI ES29LV400E ES29LV400E-90RWCI ES2 |
4MBIT(512KX 8/256K X 16) CMOS 3.0 VOLT-ONLY, BOOT SECTOR FLASH MEMORY
|
EXCELSEMI[Excel Semiconductor Inc.]
|
| ES29LV800DB-90RTG ES29DL400FB-12RTG ES29LV400DB-90 |
4MBIT(512KX 8/256K X 16) CMOS 3.0 VOLT-ONLY, BOOT SECTOR FLASH MEMORY
|
EXCELSEMI[Excel Semiconductor Inc.]
|
| LH28F004SU LH28F400SU |
4Mbit(512Kbit x 8, 256 Kbit x 16) 5V Single Voltage Flash Memory Mb12Kbit × 856千位× 16V单电压闪
|
Sharp Corporation
Sharp, Corp.
|
| M28W431 |
4Mbit (512Kb x8, Boot Block) Low Voltage Flash Memory(4Mb低压闪速存储器) Mb12KB的8，启动块）低压快闪记忆体Mb的低压闪速存储器
|
意法半导
Glenair, Inc.
|
| AM29F400BT-70EF |
Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes 256K X 16 FLASH 5V PROM, 70 ns, PDSO48
|
Spansion, Inc.
|
| MB84VD22193EC MB84VD22193EC-90 MB84VD22193EC-90-PB |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM 32M的（x 8/x16）闪
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA73
Trimmer; Series:3262; Track Resistance:5kohm; Resistance Tolerance: 10%; Power Rating:0.25W; Operating Temperature Range:-65 C to C; Resistor Element Material:Cermet; Temperature Coefficient:100 ppm; Adjustment Type:Top RoHS Compliant: Yes
CONN, M HEADER ST 1X2 .230
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
