| PART |
Description |
Maker |
| ESD5304D ESD5304D-10/TR |
4-Lines, Uni-directional, Ultra-low Capacitance Transient Voltage Suppressors
|
Will Semiconductor Ltd.
|
| ESD5302N ESD5302N-3/TR |
2-Lines, Uni-directional, Ultra-low Capacitance Transient Voltage Suppressors
|
Will Semiconductor Ltd.
|
| ESD5302F-3/TR |
2-Lines, Uni-directional, Ultra-low Capacitance Transient Voltage Suppressors
|
Will Semiconductor Ltd.
|
| GMF05LC-GS08 GMF05LC |
ESD Protection Diode Array in SOT-363 ESD保护二极管阵列采用SOT - 363
ESD protection diode array;
6-Lines Uni-Directional
or 5-Lines Bi-Directional
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| 6N140A-100 HCPL-6730 HCPL-177K-B600 HCPL-5731 HCPL |
5962-9800201KYC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-573K · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-5731 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8981001YC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8981001PC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8981001YA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8981001PA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-9800201KZC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-9800201KZA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8981001XA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
6N140A · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
6N140A/883B · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-9800201KYA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
8302401ZC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
8302401YC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
8302401YA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
8302401XA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
8302401FC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
8302401EA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
8302401EC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978504K2A · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978503KZA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978503KYC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978503KYA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978503KPC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978503KPA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-89785022A · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978501ZA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-6750 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-5730 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-5700 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-570K · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-6731 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-673K · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-6751 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-177K · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-6730 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-5701 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-675K · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-177K-300 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-177K-600 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-177K-100 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978501YC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978501YA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978501PC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978501PA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-570K-100 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
6N140A-600 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8981002KYC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8981002KPC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8981002KYA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8981002KPA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8981002KXA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-9800201KFC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-9800201KEC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-9800201KEA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-573K-100 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
(HCPL-xxxx) Hermetically Sealed / Low IF / Wide VCC / High Gain Optocouplers
3V Voltage Monitoring, Low-Cost, µP Supervisory Circuits
3.5MM M-M STREO AUDIO 30CBLE; 24AWG, BLCK MOLDED
3.5MM M-M STREO AUDIO 25CBLE; 24AWG, BLCK MOLDED
LOGIC-GATE-OUTPUT OPTOCOUPLER 逻辑门输出光耦合
Hermetically Sealed. Low IF. Wide Vcc. High Gain Optocouplers 密封。低中频。宽的VCC。高增益光电耦合
Hermetically Sealed, Low I F ,Wide V CC , High Gain Optocouplers(密封，小电流，宽电压，高增益光耦合 密封，低中频，宽V CC的，高增益光耦合器（密封，小电流，宽电压，高增益光耦合器）
NPN-OUTPUT DC-INPUT OPTOCOUPLER npn型输出DC -输入光耦合
DARLINGTON-NPN-OUTPUT DC-INPUT OPTOCOUPLER 达林 npn型输出DC -输入光耦合
Hermetically Sealed, Low IF, Wide VCC, High Gain Optocouplers 密封，中频，宽虚拟通道连接，高增益低光
3V Voltage Monitoring, Low-Cost, µP Supervisory Circuits 密封。低中频。宽的VCC。高增益光电耦合
Receptacle With A Standard Tail 达林 npn型输出DC -输入光耦合
1 CHANNEL LOGIC OUTPUT OPTOCOUPLER, 0.1 Mbps
4 CHANNEL LOGIC OUTPUT OPTOCOUPLER, 0.1 Mbps
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Agilent Technologies, Inc.
Avago Technologies, Ltd.
Analog Devices, Inc.
BI Technologies, Corp.
Coilcraft, Inc.
Harwin PLC
AGILENT TECHNOLOGIES INC
|
| ESD5302F |
Transient Voltage Suppressors
2-Lines, Uni-directional, Ultra-low Capacitance Transient Voltage Suppressors
|
TY Semicondutor
TY Semiconductor Co., L...
|
| 15KPA110 15KPA90CA 15KPA110A 15KPA28C 15KP13C 15KP |
Diode TVS Single Uni-Dir 110V 15KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 90V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Uni-Dir 110V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Bi-Dir 28V 15KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 13V 15KW 2-Pin Case D-6
Diode TVS Single Uni-Dir 58V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Uni-Dir 85V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Bi-Dir 58V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Bi-Dir 48V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Uni-Dir 40V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Uni-Dir 40V 15KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 40V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Uni-Dir 36V 15KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 33V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Uni-Dir 36V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Uni-Dir 43V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Bi-Dir 43V 15KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 45V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Uni-Dir 33V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Bi-Dir 36V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Bi-Dir 16V 15KW 2-Pin Case D-6
Diode TVS Single Uni-Dir 17V 15KW 2-Pin Case P600
Diode TVS Single Bi-Dir 64V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Uni-Dir 24V 15KW 2-Pin Case 5A
Diode TVS Single Bi-Dir 24V 15KW 2-Pin Case 5A
Diode TVS Single Uni-Dir 240V 15KW 2-Pin Case 5A
Diode TVS Single Bi-Dir 240V 15KW 2-Pin Case 5A
Diode TVS Single Bi-Dir 75V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Uni-Dir 75V 15KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 75V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Bi-Dir 75V 15KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 15V 15KW 2-Pin Case D-6
Diode TVS Single Uni-Dir 78V 15KW 2-Pin Case P600 T/R
|
New Jersey Semiconductor
|
| 1N6275 1N6281 1N6274A 1N6292 1N6271A 1N6289 1N6269 |
Diode TVS Single Uni-Dir 12.1V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 21.8V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 11.1V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 60.7V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 8.55V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 45.4V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 8.1V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 6.63V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 97.2V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 89.2V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 7.37V 1.5KW 2-Pin Case 1
Diode TVS Single Bi-Dir 7.37V 1.5KW 2-Pin Case 1.5KE
|
New Jersey Semiconductor
|
| M38230G4-XXXFP M38230G4-XXXHP M38231G4-XXXHP M3823 |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 3.1 to 3.6 V
18-Mbit (512K x 36/1M x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 512Kb x 72; Vcc (V): 3.1 to 3.6 V
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
Sync SRAM; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 3.1 to 3.6 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机
Sync SRAM; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
|
Renesas Electronics Corporation.
Renesas Electronics, Corp.
|
| X2784AG-08TT I2781A-08SR I2781A-08ST I2781A-08TR I |
PS MEDICAL SWITCHER 15V .73A 156 MHz, OTHER CLOCK GENERATOR, PDSO8
General Purpose EMI Reduction IC 156 MHz, OTHER CLOCK GENERATOR, PDSO8
General Purpose EMI Reduction IC 312 MHz, OTHER CLOCK GENERATOR, PDSO8
General Purpose EMI Reduction IC 78 MHz, OTHER CLOCK GENERATOR, PDSO8
PS LINEAR DUAL 5V@6A 9-15@2.5A
ICs for Inductive Proximity Switches; Package: P-DSO-14; VCC (min): 5.0 V; VCC (max): 30.0 V; ICC (max): 0.9 mA; IQ (max): 50.0 mA; Operating Temperature (min): -25.0 degC;
ICs for Inductive Proximity Switches; VCC (min): 5.0 V; VCC (max): 30.0 V; ICC (max): 0.9 mA; IQ (max): 50.0 mA; Operating Temperature (min): -25.0 degC;
ICs for Inductive Proximity Switches; Package: P-DSO-8; VCC (min): 5.0 V; VCC (max): 30.0 V; ICC (max): 1.0 mA; IQ (max): 50.0 mA; Operating Temperature (min): -25.0 degC;
ICs for Inductive Proximity Switches; Package: P-DSO-8; VCC (min): 5.0 V; VCC (max): 30.0 V; ICC (max): 1.0 mA; IQ (max): 50.0 mA; Operating Temperature (min): -25.0 degC;
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Alliance Semiconductor ...
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
http://
|
| 1SMC8.0A 1SMC8.5A 1SMC60A 1SMC6.5A 1SMC16A 1SMC7.0 |
UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 1500 WATTS, 5.0 THRU 170 VOLTS 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Uni-Directional Glass Passivated Junction Transient Voltage Suppressors(最大反向工作电.0V,单向玻璃钝化节点瞬变电压抑制 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Uni-Directional Glass Passivated Junction Transient Voltage Suppressors(最大反向工作电7.0V,单向玻璃钝化节点瞬变电压抑制
PTSA 1.5/10-3.5-Z
UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 1500 WATTS/ 5.0 THRU 170 VOLTS
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Central Semiconductor, Corp.
Central Semiconductor Corp.
|
|
