| PART |
Description |
Maker |
| FDG6332C FDG6332CNL |
Tantalum Molded Capacitor; Capacitance: 220uF; Voltage: 6.3V; Packaging: Tape & Reel 700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
20V N & P-Channel PowerTrench MOSFETs
20V N &P - Channel Power Trench MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| SCS120P SCS1100P SCS130P SCS140P SCS160P |
VOLTAGE 20V ~ 100V 1.0AMP Schottky Barrier Rectifiers
|
WILLAS ELECTRONIC CORP
|
| SCS120PR |
VOLTAGE 20V ~ 40V 1.0 AMP Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| SCD12L SCD14L |
VOLTAGE 20V ~ 40V 1.0 AMP Low Vf Schottky Barrier Rectifier s
|
SeCoS Halbleitertechnologie GmbH
|
| 2SA1416R 2SC3646T 2SC3646R 2SC3646S 2SA1416 |
PNP Epitaxial Planar Silicon Transistors High-Voltage Switching Applications
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 100V的五（巴西）总裁| 1A条一（c）|采用SOT - 89
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | SOT-89 晶体管|晶体管|叩| 100V的五（巴西）总裁| 1A条一（c）|采用SOT - 89
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 1A I(C) | SOT-89
|
SANYO
NEC, Corp.
|
| SM330AS SM320AS SM3200AS SM350AS SM360AS SM3100AS |
Voltage 20V ~ 200V 3.0 Amp Surface Mount Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| HS-22620RH HS-2620RH HS-2622RH |
Op Amp, Dual, Wideband, High Input Impedance Uncompensated, 100MHz, 20V/s, Rad-Hard
Op Amp, Single, 80MHz, 20V/s, Rad-Hard, 500MΩ Input Impedance
Op Amp, Single, 80MHz, 20V/s, Rad-Hard, 65MΩ Input Impedance
|
Intersil
|
| SCD2100 |
VOLTAGE 100V 2.0 AMP Surface Mount Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| SCD3100 SCD3100-15 |
VOLTAGE 100V 3.0 AMP Surface Mount Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnol...
SeCoS Halbleitertechnologie GmbH
|
| SBL30U100 |
Voltage 100v 30.0 Amp Low VF Trench MOS Barrier Schottky Recifier
|
SeCoS Halbleitertechnologie GmbH
|
| PFM320-MT |
3.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 100V
|
PACELEADER INDUSTRIAL
|
