| PART |
Description |
Maker |
| SSTS20120 |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSBD10L45CT |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSBD10L100CT |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSBR20100CTF SSBR20100CT |
High Junction Temperature
|
Silikron Semiconductor Co.,LTD.
|
| SSMD60200PT |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSMD60200CT SSMD60200CTF |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSBD2068CT |
High Junction Temperature
|
Silikron Semiconductor Co.,LTD.
Silikron Semiconductor ...
|
| SMA6F12AVCL SMA6F13A |
High junction temperature Transil
|
STMicroelectronics
|
| SMA6J-85ATR SMA6J-85CATR SMA6J33A-TR STMICROELECTR |
600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
High junction temperature Transil
|
STMicroelectronics
|
| LSIC2SD120A20 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
| BCR16CS-12LB BCR16CS-12LB-T11 |
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150掳C)
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C)
|
Renesas Electronics Corporation
|
