| PART |
Description |
Maker |
| 2SD1805 |
Bipolar Transistor, 20V, 5A, Low VCE(sat), NPN Single TP/TP-FA
|
ON Semiconductor
|
| 2SB1302 |
Bipolar Transistor, -20V, -5A, Low VCE(sat) PNP Single PCP
|
ON Semiconductor
|
| ZXTN19020CFF ZXTN19020CFFTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
20V, SOT23F, NPN high gain power transistor
|
Diodes Incorporated
|
| 2SC2059KM 2SC2059KN 2SC2059KP 2SC4099P 2SC4099M 2S |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | SC-70 晶体管|晶体管|叩| 20V的五（巴西）总裁| 20mA的一（c）|的SC - 70
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | SOT-323
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | SC-59
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR|BJT|NPN|20VV(BR)CEO|20MAI(C)|SC-59
|
Vishay Intertechnology, Inc.
|
| 2SD2118Q 2SD2097 2SD2098 2SD2118 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 10A I(C) | TO-252VAR 晶体管|晶体管|叩| 20V的五（巴西）总裁| 10A条一（c）|52VAR
|
ROHM
|
| EN3096A 2SC4489T-AN |
Bipolar Transistor
Bipolar Transistor High breakdown voltage, large current capacity
|
ON Semiconductor
|
| NSS20300MR6T1G |
20V, 5A, Low VCE(sat) PNP Transistor(20V,5A,低VCE(sat)，PNP型晶体管)
|
ON Semiconductor
|
| IRL3714L IRL3714S IRL3714 IRL3714STRR |
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 36A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 20V的五（巴西）直| 36A条（丁）|63AB
HEXFET? Power MOSFET
Power MOSFET(Vdss=20V, Rds(on)max=20mohm, Id=36A)
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier, Corp.
http://
IRF[International Rectifier]
|
| EN2555C |
Bipolar Transisitor -20V, -5A, Low VCE(sat) PNP Single PCP
|
ON Semiconductor
|
| CT90AM-18 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
INSULATED GATE BIPOLAR TRANSISTOR
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
