| PART |
Description |
Maker |
| N211030 |
Packaged : In Dispensing Tube
|
E-SWITCH
|
| N411044 |
Package : In Dispensing Tubes
|
E-SWITCH
|
| N311051 |
Package : In Dispensing Tubes
|
E-SWITCH
|
| P4C164L-25JC P4C164L-25LC P4C164L-25PC P4C164-25LC |
x8 SRAM 1.5A MOSFET Drvr W/Boost, Inv, -40C to 85C, 16-SOIC 300mil, TUBE 1.5A DUAL MOSFET DRVR, -40C to 125C, 8-DFN, TUBE 1.5A Dual MOSFET Drvr, td Match, 0C to 70C, 8-SOIC 150mil, TUBE 1.5A Dual MOSFET Drvr, 0C to 70C, 8-PDIP, TUBE x8的SRAM
|
Rochester Electronics, LLC
|
| 2SA1432 |
TRANSISTOR (HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| OV7411N OV7635 OV9630 OV7648 OV7431 |
MCU CMOS 18LD 4MHZ 1K EPRM, 0C to 70C, 18-PDIP, TUBE MCU CMOS 18LD 20MHZ 1K EPRM, 0C to 70C, 18-SOIC 300mil, TUBE MCU CMOS 18LD 20MHZ 1K EPRM, -40C to 85C, 18-PDIP, TUBE MCU CMOS 20LD 20MHZ 1K EPRM, -40C to 85C, 20-SSOP 208mil, TUBE packaging specifications MCU CMOS 18LD 4MHZ 1K EPRM, -40C to 85C, 18-PDIP, TUBE /黑白| NTSC制式| 508 × 492 |模拟|的CameraChip |技术报
|
Omnivision Technologies Inc.
|
| 2SA1432 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS.
|
TOSHIBA
|
| 8040P1S20M050 8040P1S20M020 803000S20M050 803001P0 |
Prog Solid-State Temp Sensor, -40C to 85C, 5-TO-220, TUBE 1.5A Dual MOSFET Drvr, td Match, 0C to 70C, 8-PDIP, TUBE 1.5A DUAL MOSFET DRVR, TD MATCH, -40C to 125C, 8-SOIC 150mil, TUBE 1.5A Sngl 30V MOSFET Drvr, N-Inv, -40C to 85C, 8-CERDIP 300mil, TUBE 铅M12 3WAY 5.0 LEAD M12 4WAY 5.0M 铅M12 4.0 1.5A Dual MOSFET Drvr, -40C to 85C, 8-MSOP, TUBE 铅M12 3WAY 5.0 LEAD M12 4WAY 2.0M 铅M12 400 1.5A Dual MOSFET Drvr, td Match, -40C to 125C, 8-PDIP, TUBE 铅M12 3WAY 200 LEAD M12 4WAY 5.0M 铅M12 45.0 LEAD M12 3WAY 2.0M 铅M12 3WAY 200
|
Molex, Inc. Ecliptek, Corp. Samsung Semiconductor Co., Ltd. THAT, Corp. TE Connectivity, Ltd. Rochester Electronics, LLC
|
| AM2968ALC AM2968ALCB AM2968DC AM2968A/BUA AM2968A/ |
Single High Side Driver, Inverting Inputs, Current Sensing, Overcurent Detection and Shutdown Fault Output in a 8-pin DIP package; A IR2128 packaged in a Lead-Free 8-Lead PDIP Linear Current Sensing IC in a 8-Lead DIP package; A IR2175 packaged in a 8-Lead SOIC High voltage, high speed power MOSFET and IGBT driver with independent high side and low side referenced output channels packaged in a 8-Pin SOIC; A IRS2607DSPBF shipped on Tape and Reel High voltage, high speed power MOSFET and IGBT driver with independent high side and low side referenced output channels packaged in a 8-Pin SOIC; A IRS2607DSPBF with Standard Packaging Linear Current Sensing IC in a 8-Lead DIP package; A IR2175 packaged in a 8-Lead PDIP High and Low Side Driver, SoftTurn-On, Noninverting Inputs in a 8-pin DIP package; A IR2106 packaged in a 8-Lead SOIC Half Bridge Driver, Soft Turn-On, Single Input Plus Shut-Down, All high Voltage Pins on One Side, Programmable 0.5-5us Deadtime in a 14-pin DIP DRAMController
|
|
| 2SA138407 2SA1384 |
High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
|
Toshiba Semiconductor
|
| 2SC2551 |
Transistor Silicon NPN Epitaxial Type (PCT process) Hight Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
|
TOSHIBA
|
| 2SC3672 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE CONTROL APPLICATIONS, PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS
|
TOSHIBA
|
|