| PART |
Description |
Maker |
| IRF7665S2PBF IRF7665S2TR1PBF |
Key parameters optimized for Class-D audio amplifier applications
|
International Rectifier
|
| IRFB5615PBF |
DIGITAL AUDIO MOSFET
Key Parameters Optimized for Class-D Audio Amplifier Applications
|
International Rectifier
|
| MR18R1628EG0-CM8 MR16R1628EG0-CK8 MR16R162GEG0-CK8 |
From old datasheet system
CONN HEADER 20POS DL PCB 30GOLD
Key Timing Parameters 关键的定时参
CONN HEADER 18POS DL PCB 30GOLD 关键的定时参
|
Samsung Electronic
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| 87636-2002 |
1.27mm (.050) Pitch DDR DIMM Socket, Vertical, Beige Latch, Single Key, with Beveled Metal Pins, 2.5V Left Voltage Key, 3.23mm (.127) Tail Length
|
Molex Electronics Ltd.
|
| RLDH808-1200-5 |
main technical parameters
|
Roithner LaserTechnik G...
|
| SI2303BDSRC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| SI4378DYRC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| SI7431DPRC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| SI4684DY-RC |
R-C Thermal Model Parameters
|
Vaishali Semiconductor
|
| STGP20V60F |
Tight parameters distribution
|
STMicroelectronics
|
| VCO-111TC |
Nominal Operating Parameters
|
RF Micro Devices
|
| SI7401DN-RC |
R-C Thermal Model Parameters 遥控模型参数
|
Vishay Intertechnology,Inc.
Vishay Intertechnology, Inc.
|
