| PART |
Description |
Maker |
| GBIT0812C GBIT0815C GBIT0818C GBIT0824C GBIT0805C |
Aluminum Polymer SMT Capacitor; Capacitance: 120uF; Voltage: 20V; Case Size: 10x10 mm; Packaging: Tape & Reel 500 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
TVSarray Series For Gigabit Ethernet Applications 500 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
TVSarray Series For Gigabit Ethernet Applications
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| VESD05A6-HA3-GS08 |
60 W, BIDIRECTIONAL, 6 ELEMENT, SILICON, TVS DIODE
|
VISHAY SEMICONDUCTORS
|
| 41206ESDA-SP1 |
BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
|
Cooper Bussmann, Inc.
|
| ESD8V0L2B-03LRH ESD8V0L1B-02LRH ESD8V0L09 |
Low Capacitance TVS Diode
BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE ROHS COMPLIANT, TSLP-3-1, 3 PIN
BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE ROHS COMPLIANT, TSLP-3-7, 3 PIN
BIDIRECTIONAL, SILICON, TVS DIODE ROHS COMPLIANT, TSLP-2-17, 2 PIN
|
Infineon Technologies AG
EUPEC GMBH ?CO KG
|
| P0404FC24C-T75-1 |
250 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
|
PROTEK DEVICES
|
| EBLC05C-T7 |
350 W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE
|
PROTEK DEVICES
|
| CDA4C20GTA |
600 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
|
EPCOS AG
|
| USB0812C-AE3 |
500 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
|
MICROSEMI CORP-SCOTTSDALE
|
| DNR-QDN006LF-12-BK DNR-QDN006LF-12-T07 |
300 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
|
INTERNATIONAL RESISTIVE CO INC
|
| SMP6LC24-2P-T7 SMP6LC05-2P-T7 SMP6LC15-2P-T7 SMP6L |
3600 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE SOP-16
|
ProTek Devices
|
| CDSOT23-T24LC CDSOT23-T36LC CDSOT23-T08LC CDSOT23- |
CDSOT23-T03LC~T36LC - Low Capacitance TVS Diode Array Series 500 W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE
|
Bourns Inc.
Bourns, Inc.
|
| P0404FC24C-LF-T710-2 |
250 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE ROHS COMPLIANT, FLIP CHIP-4
|
ProTek Devices
|
|
