| PART |
Description |
Maker |
| UPD166011T1J UPD166011T1J-E1-AY |
INTELLIGENT POWER DEVICE
|
Renesas Electronics Corporation
|
| MJL21193 MJL21193-D MJL21194 |
Power 16A 250V NPN
Silicon Power Transistors
From old datasheet system
TRANSISTOR,BJT,PNP,250V V(BR)CEO,160A I(C),TO-264
Power 16A 250V PNP
|
ON Semiconductor
|
| TPD4131K |
TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4124K |
Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4125K |
Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4113K HZIP23-P-1.27F HZIP23-P-1.27G HZIP23-P-1. |
INTELLIGENT POWER DEVICE HIGH VOLTAGE MONOLITHIC SILICON POWER IC
|
Toshiba Semiconductor
|
| TPD4113AK |
INTELLIGENT POWER DEVICE HIGH VOLTAGE MONOLITHIC SILICON POWER IC
|
Toshiba Semiconductor
|
| IRF644N IRF644NL IRF644NS IRF644 IRF644NSTRR |
250V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A)
Power MOSFET(Vdss=250V/ Rds(on)=240mohm/ Id=14A)
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 14A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 250V五（巴西）直|4A条（丁）|63AB
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFP264N IRFP264NPBF |
250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=250V, Rds(on)=60mohm, Id=44A)
|
IRF[International Rectifier]
|
| DLX3416 |
Intelligent Display Device
|
Osram Opto Semiconductors GmbH
|
| FQI27N25 FQB27N25 FQB27N25TMAM002 FQB27N25TMNAM002 |
250V N-Channel MOSFET(漏源电压250VN沟道增强型MOS场效应管) 25.5 A, 250 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
250V N-Channel MOSFET(漏源电压50V的N沟道增强型MOS场效应管)
250V N-Channel QFET
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
