| PART |
Description |
Maker |
| STB28N60DM2 |
Extremely low gate charge and input capacitance
|
STMicroelectronics
|
| FW0524LCS |
Extremely Low Capacitance TVS Array
|
FutureWafer Tech Co.,Lt...
|
| GI250-2 GI250-4 GI250-1 GI250-3 |
Aluminum Electrolytic Radial Lead Extremely Low Impedance Capacitor; Capacitance: 820uF; Voltage: 50V; Case Size: 12.5x40 mm; Packaging: Bulk
HIGH VOLTAGE GLASS PASSIVATED JUNCTION RECTIFIER
|
GOOD-ARK Electronics
|
| PMV56XN PMV56XN-01 |
uTrenchMOS (tm) extremely low level FET
From old datasheet system
mTrenchMOS extremely low level FET
|
Philips
|
| PMGD290XN PMGD290XN115 GD290XN115 |
Dual N-channel mTrenchMOS extremely low level FET
From old datasheet system
Dual N-channel uTrenchmos (tm) extremely low level FET 860 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| UPM1A182MHD1TO UPM1E151MPD |
Aluminum Electrolytic Radial Lead Extremely Low Impedance Capacitor; Capacitance: 1800uF; Voltage: 10V; Case Size: 12.5x20 mm; Packaging: Tape & Ammo CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 10 V, 1800 uF, THROUGH HOLE MOUNT
ALUMINUM ELECTROLYTIC CAPACITORS
|
Nichicon, Corp.
Nichicon corporation
|
| STD11N65M2 |
Extremely low gate charge
|
STMicroelectronics
|
| STP40N65M2 |
Extremely low gate charge
|
STMicroelectronics
|
| STFI11N65M2 STF11N65M2 |
Extremely low gate charge
|
STMicroelectronics
|
| SRDA05-6.T SRDA05-6.TB SRDA05-6.TBT SRDA3.3-6.T SR |
RailClamp? Low Capacitance TVS Diode Array
RailClamp庐 Low Capacitance TVS Diode Array
RailClamp垄莽 Low Capacitance TVS Diode Array
RailClamp㈢ Low Capacitance TVS Diode Array
|
Semtech Corporation
|
| DTP9531 DTP953113 |
P-Channel 30 V (D-S) MOSFET Extremely low RDS(on)
|
DinTek Semiconductor Co,.Ltd
|
| LPW-551202F LPW-551202G LPW-551202H LPW-551202J LP |
Extremely Low Resistance Power Wirewounds
|
IRC - a TT electronics Company.
|
