| PART |
Description |
Maker |
| 2SC2878A 2SC2878B |
For Muting and Switching Applications
|
Toshiba Semiconductor
|
| HN1C03FUTE85R |
For Muting And Switching Applications
|
Toshiba Semiconductor
|
| 2SC5376 EE08405 |
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER/ FOR MUTING AND SWITCHING APPLICATIONS)
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER FOR MUTING AND SWITCHING APPLICATIONS)
From old datasheet system
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER, FOR MUTING AND SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| RN1242 RN1241 RN1244 E002612 |
FOR MUTING AND SWITCHING APPLICATIONS
From old datasheet system
|
Toshiba
|
| 2SC4213 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications
|
TOSHIBA
|
| 2SC5233 |
Transistor Silicon NPN Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application
|
TOSHIBA
|
| 2SC5376F |
Transistor Silicon NPN Epitaxial Type Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications
|
TOSHIBA
|
| HN1C03F E001972 |
NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC3327 2SC3327B |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | SPAK
TRANSISTOR SILICON NPN EPITAXIAL TYPE FOR MUTING AND SWITCHING APPLICATIONS
|
TOSHIBA
|
| KRC281M KRC286M KRC282M KRC283M KRC284M KRC285M |
CAP, TANT, 100UF, 10%, 16V, E
Built in Bias Resistor
EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING)
(KRC281M - KRC286M) EPITAXIAL PLANAR NPN TRANSISTOR
|
KEC Holdings
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KIA6924S |
Muting
|
Korea Electronics (KEC)
|
