| PART |
Description |
Maker |
| IRFZ40 IRFZ40FI 3019 |
N-Channel Enhancement Mode Power MOS Transistor(N沟道增强模式功率MOSFET) N沟道增强模式功率MOS晶体管（不适用沟道增强模式功率MOSFET的）
From old datasheet system
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| STH7NA100FI STW7NA100FI STW7NA100 5759 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
From old datasheet system
N-CHANNEL MOSFET
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式功率MOS晶体 N沟道增强模式功率MOS晶体管（不适用沟道增强模式功率马鞍山晶体管
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
TE Connectivity, Ltd.
|
| STP80N03L-06 4881 |
N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(Ｎ沟道增强模式高密度功率ＭＯＳ晶体管) N沟道增强模式“超高密度”功率MOS晶体管（不适用沟道增强模式高密度功率马鞍山晶体管）
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
|
STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| STW12NA60 STH12NA60_FI 3561 STH12NA60 STH12NA60FI |
From old datasheet system
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Supercapacitor; Capacitance:0.47F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin
N-Channel Enhancement Mode Fast Power MOS Transistor(N沟道增强模式快速功率MOSFET)
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| STP6NA80FI STP6NA80 3071 |
N-Channel Enhancement Mode Fast Power MOS Transistor(N沟道增强模式快速功率MOSFET) N沟道增强模式快速功率MOS晶体管（不适用沟道增强模式快速功率MOSFET的）
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
From old datasheet system
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| MTP3N60FI MTP3N60 3037 |
N-Channel Enhancement Mode Power MOS Transistor(N沟道增强模式功率MOSFET)
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
From old datasheet system
|
意法半导
STMicroelectronics
Motorola, Inc
|
| SD219 SD217DE SD217DR SD219DR SD217 SD217CHP SD219 |
25 V, 6 ohm, N-channel enhancement-mode D-MOS power FET
(SD217 / SD219) N CHANNEL ENHANCEMENT MODE D MOS POWER FET
|
List of Unclassifed Man...
Topaz Semiconductor
ETC[ETC]
|
| APT5018BFLL APT5018SFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS 电源MOS 7TM是一个低损耗，高电压，N沟道增强模式的新一代功率MOSFET
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS
POWER MOS 7 500V 27A 0.180 Ohm
|
Advanced Power Technology, Ltd.
|
| APT10043 APT10043JVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 1000V 22A 0.430 Ohm
|
Advanced Power Technolo...
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
| SD1107DD SD1107CHP SD1117DD SD1117CHP |
100 V, 4 ohm, N-channel enhancement-mode D-MOS power FET
60 V, 2.5 ohm, N-channel enhancement-mode D-MOS power FET
|
Topaz Semiconductor
|
| PHP206 |
Dual P-channel enhancement mode MOS transistor 5600 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| APT10035JLL |
POWER MOS 7 1000V 25A 0.350 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
