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SUN10A60FD - New Generation N-Ch Power MOSFET

SUN10A60FD_8063789.PDF Datasheet


 Full text search : New Generation N-Ch Power MOSFET
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APT10026L2LL_03 APT10026L2LL APT10026L2LL03 APT100 Power MOS 7 is a new generation of low loss, high voltage, N-Channel
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38 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET TO-264MAX, 3 PIN
Microsemi Corporation
ADPOW[Advanced Power Technology]
Microsemi, Corp.
APT30GT60KR The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
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The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
STB25NM50N-1 STF25NM50N STW25NM50N STP25NM50N STB2 N-channel 500V - 0.11Ω - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh Power MOSFET
N-channel 500V - 0.11Ω - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh?/a> Power MOSFET
N-channel 500V - 0.11楼? - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh垄芒 Power MOSFET
N-channel 500V - 0.11ヘ - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh⑩ Power MOSFET
STMicroelectronics
STB15NM60N STI15NM60N STP15NM60N STF/I15NM60N STF1 N-channel 600V - 0.270ヘ - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET
N-channel 600V - 0.270Ω - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET
N-channel 600V - 0.270Ω - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh?/a> Power MOSFET
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STMicroelectronics
APT12GT60BR The Thunderbolt IGBT is a new generation of high voltage power IGBTs
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The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs
The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs
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M5LV-512/256-10SAI M5LV-512/256-12SAC M5LV-256/160 EE PLD, 10 ns, PBGA352 BGA-352
EE PLD, 12 ns, PBGA352 BGA-352
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 20 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 5.5 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP160
EE PLD, 15 ns, PBGA352 BGA-352
Fifth Generation MACH Architecture EE PLD, 5.5 ns, PQFP144
EE PLD, 15 ns, PQFP160 PLASTIC, QFP-160
CONNECTOR ACCESSORY EE PLD, 5.5 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 7.5 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP100
EE PLD, 15 ns, PQFP100 TQFP-100
Fifth Generation MACH Architecture EE PLD, 20 ns, PQFP208
EE PLD, 12 ns, PQFP100 TQFP-100
EE PLD, 12 ns, PBGA256 BGA-256
Lattice Semiconductor, Corp.
LATTICE SEMICONDUCTOR CORP
APT1001RBLC APT1001RSLC APT1001 POWER MOS VI 1000V 11A 1.000 Ohm
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Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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APT20GT60BR The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
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APT5016BFLL APT5016SFLL APT5016 POWER MOS 7 500V 30A 0.160 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
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APT6010LLL APT6010B2LL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
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APT20M20B2LL APT20M20LLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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Advanced Power Technology Ltd.
 
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