| PART |
Description |
Maker |
| FMMT458 |
400 Volt VCEO
|
TY Semiconductor Co., Ltd
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
| P4KE250A P4KE24 P4KE47 P4KE220A P4KE47A P4KE170C P |
400 WATT PEAK POWER TRANSIENT VOLTAGE SUPPRESSORS
400 WATT PEAK POWER TRANSIENT VOLTAGE SUPPRESSORS 400瓦峰值功率瞬态电压抑制器
12-Bit, 165MSPS SpeedPlus(TM) DAC Scalable Current Outputs between 2mA to 20mA 28-SOIC -40 to 85
400 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 138.00 V. Test current IT = 1 mA.
400 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 171.00 V. Test current IT = 1 mA.
|
Microsemi
Bytes
|
| FMMT551 |
60 Volt VCEO, 1 Amp continuous current.
|
TY Semiconductor Co., Ltd
|
| BCP51115 |
45 V, 1 A PNP medium power transistors - Complement: BCP54 ; fT min: 115 MHz; hFE max: 250 ; hFE min: 40 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1300 mW; VCEO max: 45 V; Package: SOT223 (SC-73); Container: Tape reel smd
|
NXP SEMICONDUCTORS
|
| BCX56 BCX56135 |
80 V, 1 A NPN medium power transistors - fT min: 130 MHz; hFE max: 250 ; hFE min: 40 ; I<sub>C</sub> max: 1000 mA; Polarity: NPN ; Ptot max: 1300 mW; VCEO max: 80 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd
|
NXP SEMICONDUCTORS
Philips
|
| CIL2230 CIL2230A CIL2230AGR CIL2230AY CIL2230GR CI |
0.750W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.100A Ic, 120 - 400 hFE
0.800W General Purpose NPN Plastic Leaded Transistor. 180V Vceo, 0.100A Ic, 120 - 400 hFE
0.800W General Purpose NPN Plastic Leaded Transistor. 180V Vceo, 0.100A Ic, 200 - 400 hFE
0.800W General Purpose NPN Plastic Leaded Transistor. 180V Vceo, 0.100A Ic, 120 - 240 hFE
0.750W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.100A Ic, 200 - 400 hFE
0.750W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.100A Ic, 120 - 240 hFE
|
Continental Device India Limited
|
| ASI10652 TVU150 |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator UHF BAND, Si, NPN, RF POWER TRANSISTOR
NPN Silicon RF Power Transistor(Ic:25A,Vcbo: 28 V,Vceo: 60 V,Vebo: 3.5 V)(NPN 硅型射频功率晶体Ic:25A,Vcbo: 28 V,Vceo: 60 V,Vebo: 3.5 V))
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| 2N3707 |
0.360W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.200A Ic, 100 - 400 hFE
|
Continental Device India Limited
|
| CSB1058A CSB1058B |
0.750W General Purpose PNP Plastic Leaded Transistor. 16V Vceo, 2.000A Ic, 100 - 240 hFE
0.750W General Purpose PNP Plastic Leaded Transistor. 16V Vceo, 2.000A Ic, 200 - 400 hFE
|
Continental Device India Limited
|
| 2SA1412-Z |
High Voltage: VCEO=-400V High speed:tr 0.7ìs Collector to Base Voltage VCBO -400 V
|
TY Semiconductor Co., Ltd
|
| IPP-RB114-200 IPP-RB114-25 IPP-RB114-75 IPP-RB114- |
RESISTOR, 400 WATT, FLANGELESS
|
Innovative Power Produc...
|
