| PART |
Description |
Maker |
| IRL2203 IRL2203N IRL2203NPBF |
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A?
|
International Rectifier
|
| IRL7833 IRL7833S IRL7833L L7833S |
HEXFETPower MOSFET HEXFETPower MOSFET
(IRL7833x) HEXFETPower MOSFET
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRHNB8Z60 IRHNB3Z60 IRHNB4Z60 IRHNB7Z60 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT
RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3)
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package
30V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package
|
IRF[International Rectifier]
|
| RF1K49157 |
6.3A, 30V, Avalanche Rated, Single N-Channel LittleFET Enhancement Mode Power MOSFET
6.3A, 30V, AVALANCHE RATED, SINGLE N-CHANNEL LITTLEFET⒙ ENHANCEMENT MODE POWER MOSFET
6.3A, 30V, Avalanche Rated, Single N-Channel LittleFETEnhancement Mode Power MOSFET
|
Fairchild Semiconductor Corporation
|
| IRF3703 IRF3703PBF |
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A)
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?)
Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)
|
International Rectifier
|
| TPH11006NL |
Power MOSFET (N-ch single 30V<VDSS??0V)
Power MOSFET (N-ch single 30V<VDSS≤60V)
|
Toshiba, Corp.
|
| IRL2203NSTRR IRL2203NSTRL IRL2203NL |
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
|
International Rectifier
|
| IRF3707ZCL IRF3707ZCS |
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
|
International Rectifier
|
| IRF7303 IRF7303TR |
Generation V Technology
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=30V, Rds(on)=0.050ohm)
|
International Rectifier
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