| PART |
Description |
Maker |
| MRF1507 MRF1507T1 |
LATERAL NCHANNEL BROADBAND RF POWER MOSFET
|
MOTOROLA[Motorola, Inc]
|
| MRF1507 MRF1507T1 |
LATERAL NCHANNEL BROADBAND RF POWER MOSFET
|
Motorola, Inc.
|
| IRFM240 2N7219 |
N-CHANNEL POWER MOSFET
NCHANNEL POWER MOSFET
|
SemeLAB
SEME-LAB[Seme LAB]
|
| IRFM1310ST |
NCHANNEL POWER MOSFET
N-CHANNEL POWER MOSFET
|
SemeLAB
SEME-LAB[Seme LAB]
|
| E142-SERIES M342-SERIES T242-SERIES X242-SERIES E2 |
Transient Voltage Suppressor Diodes
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRFR3910 with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7862PBF with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRL2203NS with Standard Packaging
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFB260N with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF9410 with Standard Packaging
250V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU12N25D with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRLR4343 with Standard Packaging
Peripheral IC 外围芯片
|
Bourns, Inc.
Hoffman
TOKO, Inc.
|
| AM29F400AB-150FEB AM29F400AT-150FE AM29F400AT-150S |
55V Single N-Channel HEXFET Power MOSFET in a D2Pak Package; A IRF3205ZS with Standard Packaging
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFB3307 with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF1010ZL with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF1010Z with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF3707 with Standard Packaging
x8/x16 Flash EEPROM
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to IRF1407 with Lead Free Packaging
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRLU120N with Standard Packaging x8/x16闪存EEPROM
|
Advanced Micro Devices, Inc.
|
| NTD78N03-35G NTD78N03T4G NTD78N03-1G NTD78N03.1G N |
Power MOSFET 25 V, 78 A, Single N-Channel, DPAK; Package: 3 IPAK, Straight Lead; No of Pins: 3; Container: Rail; Qty per Container: 75 11.4 A, 25 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 25 V, 78 A, Single N-Channel, DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 11.4 A, 25 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 25 V, 78 A, Single N-Channel, DPAK; Package: DPAK-3 (SINGLE GAUGE); No of Pins: 4; Container: Rail; Qty per Container: 75
Power MOSFET 25 V, 78 A, Single N?Channel, DPAK
|
ON Semiconductor
|
| IRLL024NQ IRLL024NQTRPBF |
3.1 A, 55 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET
HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
International Rectifier
|
| STB55NE06 5405 |
N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N沟道增强模式功率MOSFET) N沟道增强模式“的单一的功能SIZETM”功率MOSFET（不适用沟道增强模式功率MOSFET的）
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET
From old datasheet system
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
N - CHANNEL ENHANCEMENT MODE ?SINGLE FEATURE SIZE ?POWER MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| STB60NE03L-10 5466 |
N - CHANNEL ENHANCEMENT MODE ?SINGLE FEATURE SIZE ?POWER MOSFET
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET
From old datasheet system
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
N-CHANNEL Power MOSFET
PC 8C 8#20 SKT RECP -通道增强型“特征尺寸单”功率MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
意法半导
ST Microelectronics
STMicroelectronics N.V.
|
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| NTHS4101PT1/D |
Trench Power MOSFET 20 V P Channel Single ChipFET
20 V, P-Channel Power MOSFET ChipFET Single Package(20V，单P通道ChipFET封装的功率MOSFET) 20五，P沟道功率MOSFET ChipFET的单包（20V的，单P通道ChipFET的封装的功率MOSFET的）
|
ON Semiconductor
|
