| PART |
Description |
Maker |
| MTD12N06EZL_D ON2462 MTD12N06EZL-D |
TMOS E-FET High Energy Power FET DPAK for Surface Mount or Insertion Mount N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 12 AMPERES 60 VOLTS
|
ON Semiconductor
|
| MTD20N03HDL MTD20N03HL 20N03HL |
HDTMOS E-FET High Density Power FET DPAK for Surface Mount
TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS RDS(on) = 0.035 OHM
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
| EGL41B EGL41A EGL41G EGL41F EGL41D EGL41C BYM12-10 |
SURFACE MOUNT GLASS PASSIVATED JUNCTION FAST EFFICIENT RECTIFIER 表面贴装玻璃钝化结快速高效整
Surface Mount Glass Passivated Junction Fast Efficient Rectifier(表贴型钝化玻璃结型快速效应整流器) 表面安装玻璃钝化结快速高效整流器（表贴型钝化玻璃结型快速效应整流器
|
GE Security, Inc.
GE[General Semiconductor]
|
| MTB4N80E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MTB8N50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MTB9N25E MTB9N25E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 9.0 AMPERES 250 VOLTS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| PRLL4001 PRLL4002 |
SURFACE MOUNT GLASS PASSIVATED JUNCTION
|
EIC discrete Semiconductors
|
| MTB3N60E_D ON2423 MTB3N60E MTB3N60E-D ON2422 |
From old datasheet system
TMOS POWER FET 3.0 AMPERES 600 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| GN13 GN1G GN1B GN1A GN1D |
GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT
|
SynSemi, Inc.
|
| GN13 GN1B GN1K GN1M GN1A GN1G GN1J |
SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER
|
GOOD-ARK[GOOD-ARK Electronics]
|
| GF1J GF1M |
GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT
|
Shenzhen Luguang Electronic Technology Co., Ltd
Shenzhen Luguang Electr...
|
