| PART |
Description |
Maker |
| RASA22BK3 |
Equerres dappui lateral reglables
|
Hammond Manufacturing Ltd.
|
| MRF6S19100H MRF6S19100HR3 MRF6S19100HR306 MRF6S191 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
Freescale Semiconductor, Inc
MOTOROLA
|
| MRF9060MR1 MRF9060MBR1 MRF9060M |
MRF9060MR1, MRF9060MBR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs
The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
| MRF5S19100L MRF5S19100LR3 MRF5S19100LSR3 |
MRF5S19100LR3, MRF5S19100LSR3 1990 MHz, 22 W Avg., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
1990 MHz, 22 W Avg., 2 x N–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
| IRM-8608S |
Miniature Type IRM(Lateral)
|
EVERLIGHT[Everlight Electronics Co., Ltd]
|
| NUP4101FCT1-D |
5-Pin Lateral Bi-Directional Zener Array
|
ON Semiconductor
|
| SD5000-LCC6 |
N-Channel Lateral DMOS FET(N沟道侧面DMOS场效应管)
|
Semelab(Magnatec)
|
| MRF282 |
LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
|
Motorola, Inc.
|
| A2T21H360-23N A2T21H360-23NR6 |
N--Channel Enhancement--Mode Lateral MOSFET
|
NXP Semiconductors
|
| 0906-2 |
N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale Semiconductor, Inc
|
