| PART |
Description |
Maker |
| P2750 P2750-06 P2750-08 P3257-30 P3257-31 P3981 P3 |
0.2mW; allowable current:6mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation
0.2mW; allowable current:3mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation
0.2mW; allowable current:50mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation
|
Hamamatsu Corporation
|
| FDI030N06 |
N-Channel PowerTrench? MOSFET 60V, 193A, 3.2mW
N-Channel PowerTrench垄莽 MOSFET 60V, 193A, 3.2mW
|
Fairchild Semiconductor
|
| NDHU200APAE2 |
2mW; 5V; 70mA blue laser diode
|
NICHIA CORPORATION
|
| AN7100S |
Dual 2mW Audio Power Amplifier Circuit
|
Panasonic
|
| 2N3658 |
MAXIMUM ALLOWABLE RATINGS
|
New Jersey Semi-Conductor Products, Inc.
|
| BM4515-04W-B40 BM4515-04W-B50 |
Allowable Ambient Temperature Range
|
List of Unclassifed Manufacturers
|
| FBA09A12M FBA09A12L FBA09A12M1A FBA09A12H FBA09A12 |
Allowable Ambient Temperature Range
|
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| TSA5888CYRMG |
Low Vcesat PNP Transistor High allowable power dissipation.
|
Taiwan Semiconductor Company, Ltd
|
| 2N5207 |
MAXIMUM ALLOWABLE RATINGS
MAXIMUM ALLOWABLE RATINGS
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
|
| L8231 L8231-21 L8231-22 L8231-23 L8231-32 L8231-44 |
2V; 0.2mW; laser diode: repectacle type, 1.3um, 1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit ethernet, HDTV, SDH
Receptacle type, 1.3 レm, 1.25, 2.5 Gbps 插座类型.3レ米.25.5 Gbps
CAP 1.5PF 50V /-0.25PF C0G SMD-0402 TR-7-PA SN100 插座类型.3レ米.25.5 Gbps
Receptacle type/ 1.3 m/ 1.25/ 2.5 Gbps
Receptacle type, 1.3 m, 1.25, 2.5 Gbps
Receptacle type 1.3 m 1.25 2.5 Gbps
Receptacle type, 1.3 μm, 1.25, 2.5 Gbps
FIBER OPTIC LASER DIODE EMITTER, 1250Mbps, PANEL MOUNT, SC CONNECTOR
|
Hamamatsu Photonics K.K.
HAMAMATSU[Hamamatsu Corporation]
|
