| PART |
Description |
Maker |
| ECA-2AM100 ECJ-2VB1H103K 1812SMS-68NJLB ERJ-8GEYJ1 |
280W GaN Wideband Pulsed Power Amplifier
|
RF Micro Devices
|
| MAGX-000035-015000-V1 MAGX-000035-015000-15 |
GaN on SiC HEMT Pulsed Power Transistor
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
M/A-COM Technology Solu...
|
| ECJ-2VB1H104K ECJ-2VB1H103K ERJ-8GEY0R00 ERJ-8GEYJ |
280W GaN WIDE-BAND PULSED POWER AMPLIFIER
|
RF Micro Devices
|
| RFHA1023 |
225W GaN WIDE-BAND PULSED POWER AMPLIFIER
|
RF Micro Devices
|
| MAGX-002735-SB0PPR MAGX-002735-040L00 |
GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| RFHA1006 |
9W GaN WIDEBAND POWER AMPLIFIER
|
RF Micro Devices
|
| GRM21BF51C106ZE15L GRM188R71H103KA01D 100A3R3BW150 |
225MHz TO 1215MHz, 9W GaN WIDEBAND
|
RF Micro Devices
|
| ECE-V1HA101UP RF3932SQ EEV-TG2A101M ERJ-8GEYJ100V |
60W GaN WIDEBAND POWER AMPLIFIER
|
RF Micro Devices
|
| ECE-V1HA101UP EEV-TG2A101M ERJ-8GEYJ100V GRM32NR72 |
30W GaN WIDEBAND POWER AMPLIFIER
|
RF Micro Devices
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| 2N334 2N335 2N334A 2N335/1299 |
Trans GP BJT NPN 3-Pin TO-5
Trans GP BJT PNP 45V 0.03A 6-Pin LCC-2
Trans GP BJT PNP 40V 0.2A 6-Pin LCC-2
|
New Jersey Semiconductor
|
| SL1010003 SL1010003-B |
TRANS,WALL,9VDC/800mA,F2 2.1mm x 5.5mm,UL/CUL
TRANS,WALL,REG LIN,9VDC/500mA 2.1mmX5.5mm,CTR POS,UL/CSA
|
Ametherm, Inc
|
