| PART |
Description |
Maker |
| SG2644 SG2644DW SG2644J SG2644M SG2644R SG2644T SG |
Half Bridge Driver, Non-Inverting
DUAL HIGH SPEED DRIVER 3 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP8
DUAL HIGH SPEED DRIVER 3 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, MBFM9
DUAL HIGH SPEED DRIVER 3 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, CDIP14
DUAL HIGH SPEED DRIVER 3 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, CDIP8
EXTRACTION TOOL 566 SERIES
From old datasheet system
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| IRS21362DJPBF IRS21362DSTRPBF IRS21362DPBF |
3 CHANNEL, HALF BRIDGE BASED PRPHL DRVR, PQCC44 LEAD FREE, MS-018AC, PLASTIC, LCC-44
3 CHANNEL, HALF BRIDGE BASED PRPHL DRVR, PDSO28 LEAD FREE, MS-013AE, PLASTIC, SOIC-28
3 CHANNEL, HALF BRIDGE BASED PRPHL DRVR, PDIP28 LEAD FREE, MS-011AB, PLASTIC, DIP-28
|
TT electronics Semelab, Ltd.
|
| TC4428AVUA713 TC4426A_06 TC4426ACMF TC4426ACMF713 |
1.5A Dual High-Speed Power MOSFET Drivers
1.5 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO8 0.150 INCH, PLASTIC, MS-012, SOIC-8
1.5 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP8
|
MICROCHIP[Microchip Technology]
|
| MGW12N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP20N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP21N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP11N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP7N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP11N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGW12N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGS05N60D_D ON1885 MGS05N60D MGS05N60D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
IGBT 0.5 A @ 25 600 V
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
