| PART |
Description |
Maker |
| FESD05LCDS |
Extremely Low Capacitance TVS Diode
|
FutureWafer Tech Co.,Lt...
|
| PESD4V0Z1BCSF |
Extremely low capacitance bidirectional ESD protection diode
|
Nexperia
|
| PESD5V0X1BCAL |
Extremely low capacitance bidirectional ESD protection diode
|
NXP Semiconductors
|
| GI1004 GI1001 GI1002 GI1003 |
GLASS PASSIVATED FAST EFFICIENT RECTIFIER
Aluminum Electrolytic Radial Lead Extremely Low Impedance Capacitor; Capacitance: 470uF; Voltage: 50V; Case Size: 12.5x25 mm; Packaging: Bulk
|
GE[General Semiconductor]
GE Security, Inc.
|
| SBL82314G SBL82314N SBL82314Z SBL81314Z SBL81314N |
Low Power BIDI Optical Standard Module 1550 nm Emitting/ 1310 nm Receiving
Low Power BIDI Optical Standard Module 1550 nm Emitting 1310 nm Receiving
Low Power BIDI Optical Standard Module 1550 nm Emitting, 1310 nm Receiving
|
INFINEON[Infineon Technologies AG]
http://
|
| PMWD20XN |
Dual N-channel microTrenchMOS(tm) extremely low level FET
DUAL N-CHANNEL UTRENCHMOS EXTREMELY LOW LEVEL FET
|
NXP Semiconductors
Philips Semiconductors
|
| SBL52214Z SBL52214G SBL52214N |
Low Power BIDI Optical Standard Module 1310 nm Emitting, 1310 nm Receiving 低功率比迪光学标准模1310纳米发光，纳米接1310
|
INFINEON[Infineon Technologies AG]
|
| IPW65R041CFD |
extremely low losses due to very low fom rdson qg and eoss
|
Infineon Technologies AG
|
| SBH52414N-FSAN SBH52414Z-FSAN SBH52414G-FSAN SBH52 |
High Power BIDI Optical Standard Module 1310 nm Emitting, 1550 nm Receiving 高功率比迪光学标准模310纳米发光550纳米接收
2 GANG DEEP DEVICE BOX SCA-294
Components and FTTx solutions - Tx 1310nm/Rx 1550nm
High Power BIDI Optical Standard Module 1310 nm Emitting/ 1550 nm Receiving
|
INFINEON[Infineon Technologies AG]
|
| HCU65R600T |
Extremely low switching loss
|
SemiHow Co.,Ltd.
|
| SRDA05-6.T SRDA05-6.TB SRDA05-6.TBT SRDA3.3-6.T SR |
RailClamp? Low Capacitance TVS Diode Array
RailClamp庐 Low Capacitance TVS Diode Array
RailClamp垄莽 Low Capacitance TVS Diode Array
RailClamp㈢ Low Capacitance TVS Diode Array
|
Semtech Corporation
|
