| PART |
Description |
Maker |
| HMP351S6AFR8C-S6 HMP351S6AFR8C-S5 HMP351S6AFR8C-Y5 |
512M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 2Gb version A
|
Hynix Semiconductor, Inc.
|
| M470L3223BT0 |
32Mx64 200pin DDR SDRAM SODIMM based on 32Mx8 Data Sheet
|
Samsung Electronic
|
| NT256D64S88A2GM-8B NT256D64S88A2GM NT256D64S88A2GM |
200pin One Bank Unbuffered DDR SO-DIMM
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| HYMD564M646BL6-D43 HYMD564M646BL6-H HYMD564M646BL6 |
200pin Unbuffered DDR SDRAM SO-DIMMs based on 512Mb B ver. (TSOP)
|
Hynix Semiconductor
|
| M464S1724ETSNBSP M464S0924E M464S0924ETS M464S0924 |
64MB / 128MB Unbuffered SODIMM
64MB 128MB Unbuffered SODIMM
64MB, 128MB Unbuffered SODIMM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M470L6423CK0 |
512MB DDR SDRAM MODULE (64Mx64 based on DDP 64Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M470L6423EN0-CLB3 M470L6423EN M470L6423EN0-A2 M470 |
512MB Unbuffered SODIMM(based on sTSOP)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| V43648Y04VCTG-75 |
3.3 VOLT 8M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SODIMM
|
Mosel Vitelic, Corp.
Mosel Vitelic Corp
|
| V43644Y04VCTG-75 |
3.3 VOLT 4M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SODIMM
|
MOSEL[Mosel Vitelic, Corp]
|
| UG42S6442HSG UG42S6442HSG-PL UG42S6442HSG-PH |
16M BYTES (2M X 64 BITS) PC100 SDRAM UNBUFFERED SODIMM
|
List of Unclassifed Manufacturers
ETC
|
| V436616Y24 V436616Y24VXXG-10PC V436616Y24VXXG-75PC |
3.3 VOLT 16M x 64 HIGH PERFORMANCE SDRAM UNBUFFERED SODIMM
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| V436664Z24VG-75PC V436664Z24V V436664Z24VG-10PC V4 |
512MB 144-PIN UNBUFFERED SDRAM SODIMM, 64M x 64 3.3 VOLT
|
Mosel Vitelic, Corp.
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
