| PART |
Description |
Maker |
| OM6233SS OM6227SS OM6233SSV OM6231SS OM6232SS OM62 |
1000V Dual N-Channel MOSFET in a S-6D package
500V Dual N-Channel MOSFET in a S-6D package
400V Dual N-Channel MOSFET in a S-6D package
500V Dual N-Channel MOSFET in a S-6E package
1000V Dual N-Channel MOSFET in a S-6E package
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6D, SIP-6
400V Dual N-Channel MOSFET in a S-6E package 400V双N沟道MOSFET的在一个S - 6E条包
10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6E, SIP-6
|
International Rectifier
Electronic Theatre Controls, Inc.
Atmel, Corp.
|
| TSC427IJA TSC427EPA MAX626/7/8-TSC426/7/8 MAX626MJ |
IC FLEX 10KA FPGA 100K 240-RQFP
Dual Power MOSFET Drivers
Dual MOSFET Driver
|
Maxim Integrated Products, Inc.
MAXIM INTEGRATED PRODUCTS INC
|
| IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
-100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET
100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
| HP4936DY FN4469 HP4936DYT |
5.8A, 30V, 0.037 Ohm, Dual N-Channel,Logic Level Power MOSFET(5.8A, 30V, 0.037 Ω,双N沟道,逻辑电平功率MOS场效应管) 5.8 A, 30 V, 0.037 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 5.8A I(D) | SO 5.8 A, 30 V, 0.037 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
5.8A/ 30V/ 0.037 Ohm/ Dual N-Channel/ Logic Level Power MOSFET
5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| NTMD2P01R2 NTMD2P01R2-D |
Power MOSFET -2.3 Amps, -16 Volts Dual SO-8 Package
Power MOSFET -2.3 Amps, -16 Volts Dual SO Package(-2.3A16V，双通道SO-8封装的功率MOSFET) 2.3 A, 16 V, 0.1 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| NTMD6N04R2 NTMD6N04R2G |
40V, 6A, Dual S0-8, N-Ch 4.6 A, 40 V, 0.034 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 40 V, 5.8 A, Dual N-Channel SOIC-8
|
ON Semiconductor
|
| RF1K49154 FN4143 |
2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFETPower MOSFET
2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET Power MOSFET
2A 60V 0.130 Ohm Dual N-Channel LittleFET Power MOSFET
From old datasheet system
2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET⑩ Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| APTM20TDUM16P APTM20TDUM16PG |
Triple dual common source MOSFET Power Module 104 A, 200 V, 0.016 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
http://
|
| EL7242CN EL7252CSZ-T7 EL7242 EL7242CS EL7242CS-T13 |
Dual Input, High Speed, Dual Channel Power MOSFET Driver 2 A 2 CHANNEL, AND GATE BASED MOSFET DRIVER, PDIP8
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| APTM20DUM08TG |
Dual common source MOSFET Power Module 208 A, 200 V, 0.01 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
Advanced Power Technology
|
| APTM120TDU57P |
17 A, 1200 V, 0.57 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Triple dual common source MOSFET Power Module
|
ADPOW[Advanced Power Technology]
|
| IRHQ567110 IRHQ567110P IRHQ563110 IRHQ563110N IRHQ |
100V 300kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a 28-pin LCC package
100V Dual 2N- and 2P- Channel MOSFET in a 28-pin LCC package 100V的双n -2P -通道MOSFET的采8引脚LCC封装
RADIATION HARDENED 100V, COMBINATION 2N-2P-CHANNEL POWER MOSFET SURFACE MOUNT (LCC-28)
RADIATION HARDENED POWER MOSFET
100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a 28-pin LCC package
|
HIROSE ELECTRIC Co., Ltd.
IRF[International Rectifier]
|
|
